参数资料
型号: IDT71V546S100PFG
厂商: IDT, Integrated Device Technology Inc
文件页数: 12/21页
文件大小: 0K
描述: IC SRAM 4MBIT 100MHZ 100TQFP
标准包装: 72
格式 - 存储器: RAM
存储器类型: SRAM - 同步 ZBT
存储容量: 4.5M(128K x 36)
速度: 100MHz
接口: 并联
电源电压: 3.135 V ~ 3.465 V
工作温度: 0°C ~ 70°C
封装/外壳: 100-LQFP
供应商设备封装: 100-TQFP(14x20)
包装: 托盘
其它名称: 71V546S100PFG
800-2325
IDT71V546S100PFG-ND
IDT71V546, 128K x 36, 3.3V Synchronous SRAM with
ZBT ? Feature, Burst Counter and Pipelined Outputs
Read Operation With Chip Enable Used (1)
Commercial and Industrial Temperature Ranges
Cycle
n
n+1
n+2
n+3
n+4
n+5
n+6
n+7
n+8
n+9
Address
X
X
A0
X
A1
X
X
A2
X
X
R/ W
X
X
H
X
H
X
X
H
X
X
ADV/ LD
L
L
L
L
L
L
L
L
L
L
CE (1)
H
H
L
H
L
H
H
L
H
H
CEN
L
L
L
L
L
L
L
L
L
L
BW x
X
X
X
X
X
X
X
X
X
X
OE
X
X
X
X
L
X
L
X
X
L
I/O
?
?
Z
Z
Q0
Z
Q1
Z
Z
Q2
Comments
Deselected
Deselected
Address and Control meet setup
Deselected or STOP
Address A0 read out. Load A1
Deselected or STOP
Address A1 Read out. Deselected
Address and Control meet setup
Deselected or STOP
Address A2 read out. Deselected
NOTES:
1. H = High; L = Low; X = Don’t Care; ? = Don’t Know; Z = High Impedance.
2. CE = L is defined as CE 1 = L, CE 2 = L and CE2 = H. CE = H is defined as CE 1 = H, CE 2 = H or CE 2 = L.
3. Device Outputs are ensured to be in High-Z after the first rising edge of clock upon power-up.
Write Operation With Chip Enable Used (1)
3821 tbl 18
Cycle
n
n+1
n+2
n+3
n+4
n+5
n+6
n+7
n+8
n+9
Address
X
X
A0
X
A1
X
X
A2
X
X
R/ W
X
X
L
X
L
X
X
L
X
X
ADV/ LD
L
L
L
L
L
L
L
L
L
L
CE (1)
H
H
L
H
L
H
H
L
H
H
CEN
L
L
L
L
L
L
L
L
L
L
BW x
X
X
L
X
L
X
X
L
X
X
OE
X
X
X
X
X
X
X
X
X
X
I/O
?
?
Z
Z
D0
Z
D1
Z
Z
D2
Comments
Deselected
Deselected
Address and Control meet setup
Deselected or STOP
Address D0 Write In. Load A1
Deselected or STOP
Address D1 Write In. Deselected
Address and Control meet setup
Deselected or STOP
Address D2 Write In. Deselected
NOTES:
1. H = High; L = Low; X = Don’t Care; ? = Don’t Know; Z = High Impedance.
2. CE = L is defined as CE 1 = L, CE 2 = L and CE 2 = H. CE = H is defined as CE 1 = H, CE 2 = H or CE 2 = L.
12
3821 tbl 19
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