参数资料
型号: IDT71V547S100PFGI
厂商: IDT, Integrated Device Technology Inc
文件页数: 10/19页
文件大小: 0K
描述: IC SRAM 4MBIT 100NS 100TQFP
标准包装: 72
格式 - 存储器: RAM
存储器类型: SRAM - 同步 ZBT
存储容量: 4.5M(128K x 36)
速度: 100ns
接口: 并联
电源电压: 3.135 V ~ 3.465 V
工作温度: -40°C ~ 85°C
封装/外壳: 100-LQFP
供应商设备封装: 100-TQFP(14x14)
包装: 托盘
其它名称: 71V547S100PFGI
IDT71V547, 128K x 36, 3.3V Synchronous SRAM with
ZBT ? Feature, Burst Counter and Flow-Through Outputs
Read Operation with Chip Enable Used (1)
Commercial and Industrial Temperature Ranges
Cycle
n
n+1
n+2
n+3
n+4
n+5
n+6
n+7
n+8
n+9
Address
X
X
A0
X
A1
X
X
A2
X
X
R/ W
X
X
H
X
H
X
X
H
X
X
ADV/ LD
L
L
L
L
L
L
L
L
L
L
CE (1)
H
H
L
H
L
H
H
L
H
H
CEN
L
L
L
L
L
L
L
L
L
L
BW x
X
X
X
X
X
X
X
X
X
X
OE
X
X
X
L
X
L
X
X
L
X
I/O (3)
?
Z
Z
Q0
Z
Q1
Z
Z
Q2
Z
Comments
Deselected
Deselected
Address A0 and Control meet setup
Address A0 read out. Deselected
Address A1 and Control meet setup
Address A1 Read out. Deselected
Deselected
Address A2 and Control meet setup
Address A2 read out. Deselected
Deselected
NOTES:
1. H = High; L = Low; X = Don’t Care; ? = Don't Know; Z = High Impedance.
2. CE 2 timing transition is identical to CE 1 signal. CE 2 timing transition is identical but inverted to the CE 1 and CE 2 signals.
3. Device outputs are ensured to be in High-Z during device power-up.
Write Operation with Chip Enable Used (1)
3822 tbl 18
Cycle
n
n+1
n+2
n+3
n+4
n+5
n+6
n+7
n+8
n+9
Address
X
X
A0
X
A1
X
X
A2
X
X
R/ W
X
X
L
X
L
X
X
L
X
X
ADV/ LD
L
L
L
L
L
L
L
L
L
L
CE (1)
H
H
L
H
L
H
H
L
H
H
CEN
L
L
L
L
L
L
L
L
L
L
BW x
X
X
L
X
L
X
X
L
X
X
OE
X
X
X
X
X
X
X
X
X
X
I/O
?
Z
Z
D0
Z
D1
Z
Z
D2
Z
Comments
Deselected
Deselected
Address A0 and Control meet setup
Address D0 Write In. Deselected
Address A1 and Control meet setup
Address D1 Write In. Deselected
Deselected
Address A2 and Control meet setup
Address D2 Write In. Deselected
Deselected
NOTES:
1. H = High; L = Low; X = Don’t Care; ? = Don't Know; Z = High Impedance.
2. CE = L is defined as CE 1 = L, CE 2 = L and CE 2 = H. CE = H is defined as CE 1 = H, CE 2 = H or CE 2 = L.
10
3822 tbl 19
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