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参数资料
| 型号： | IGB01N120H2 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | HighSpeed 2-Technology |
| 中文描述： | 高速2 -技术 |
| 文件页数： | 3/13页 |
| 文件大小： | 390K |
| 代理商： | IGB01N120H2 |
IGP01N120H2,
IGD01N120H2
IGB01N120H2
Power Semiconductors
3
Rev. 2, Mar-04
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
13
6.3
370
28
0.08
0.06
0.14
-
-
-
-
-
-
-
ns
T
j
=25
°
C,
V
CC
=800V,
I
C
=1A,
V
GE
=15V/0V,
R
G
=241
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
2)
=180nH,
2)
=40pF
mJ
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
12
8.9
450
43
0.11
0.09
0.2
-
-
-
-
-
-
-
ns
T
j
=150
°
C
V
CC
=800V,
I
C
=1A,
V
GE
=15V/0V,
R
G
=241
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
2)
=180nH,
2)
=40pF
mJ
Switching Energy ZVT, Inductive Load
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-off energy
E
off
V
CC
=800V,
I
C
=1A,
V
GE
=15V/0V,
R
G
=241
,
C
r
T
j
=25
°
C
T
j
=150
°
C
2)
=1nF
-
-
0.02
0.044
-
-
mJ
2
)
Leakage inductance L
σ
and stray capacity C
σ
due to dynamic test circuit in figure E
3)
Commutation diode from device IKP01N120H2
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|---|---|
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IGB01N120H2_07 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HighSpeed 2-Technology |
| IGB01N120H2ATMA1 | 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 1A 28W TO263-3-2 |
| IGB03F120 | 制造商:Infineon Technologies AG 功能描述: |
| IGB03N120H2 | 功能描述:IGBT 晶体管 HIGH SPEED 2 TECH 1200V 3A RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IGB03N120H2ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 9.6A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 9.6A 62.5W TO263-3 |
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