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| 型号： | IGB01N120H2 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | HighSpeed 2-Technology |
| 中文描述： | 高速2 -技术 |
| 文件页数： | 7/13页 |
| 文件大小： | 390K |
| 代理商： | IGB01N120H2 |
IGP01N120H2,
IGD01N120H2
IGB01N120H2
Power Semiconductors
7
Rev. 2, Mar-04
E
,
S
0A
1A
2A
3A
0.0mJ
0.2mJ
0.4mJ
0.6mJ
E
on
1
E
off
E
ts
1
E
,
S
50
100
150
200
0.05mJ
0.10mJ
0.15mJ
0.20mJ
0.25mJ
E
ts
1
E
on
1
E
off
I
C
,
COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
j
= 150
°
C,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
= 241
,
dynamic test circuit in Fig.E )
R
G
,
GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
j
= 150
°
C,
V
CE
= 800V,
V
GE
= +15V/0V,
I
C
= 1A,
dynamic test circuit in Fig.E )
E
,
S
-40°C
25°C
100°C
150°C
0.00mJ
0.05mJ
0.10mJ
0.15mJ
0.20mJ
0.25mJ
E
ts
1
E
on
1
E
off
E
o
,
T
0V/us
1000V/us
2000V/us
3000V/us
0.00mJ
0.02mJ
0.04mJ
0.06mJ
I
C
=0.3A,
T
J
=150°C
I
C
=0.3A,
T
J
=25°C
I
C
=1A,
T
J
=150°C
I
C
=1A,
T
J
=25°C
T
j
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load,
V
CE
= 800V,
V
GE
= +15V/0V,
I
C
= 1A,
R
G
= 241
,
dynamic test circuit in Fig.E )
dv/dt
, VOLTAGE
SLOPE
Figure 16. Typical turn off switching energy
loss for soft switching
(
dynamic test circuit in Fig. E
)
1
)
E
on
and
E
ts
include losses
due to diode recovery.
1
)
E
and
E
include losses
due to diode recovery.
1
)
E
and
E
include losses
due to diode recovery.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IGB01N120H2_07 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HighSpeed 2-Technology |
| IGB01N120H2ATMA1 | 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 1A 28W TO263-3-2 |
| IGB03F120 | 制造商:Infineon Technologies AG 功能描述: |
| IGB03N120H2 | 功能描述:IGBT 晶体管 HIGH SPEED 2 TECH 1200V 3A RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IGB03N120H2ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 9.6A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 9.6A 62.5W TO263-3 |
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