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参数资料
| 型号： | IL300-DEFG |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 光电元器件 |
| 英文描述： | SPECIALTY OPTOELECTRONIC DEVICE |
| 文件页数： | 2/8页 |
| 文件大小： | 444K |
| 代理商： | IL300-DEFG |
Document Number: 83622
www.vishay.com
Revision 17-August-01
2
IL300 Terms
KI—Servo Gain
The ratio of the input photodiode current (IP1) to the LED cur-
rent (IF). i.e., K1 = IP1/ IF.
K2—Forward Gain
The ratio of the output photodiode current (IP2) to the LED
current (IF), i.e., K2 = IP2/ IF.
K3—Transfer Gain
The Transfer Gain is the ratio of the Forward Gain to the Servo
gain, i.e., K3 = K2/K1.
K3—Transfer Gain Linearity
The percent deviation of the Transfer Gain, as a function of
LED or temperature from a specic Transfer Gain at a xed
LED current and temperature.
Photodiode
A silicon diode operating as a current source. The output cur-
rent is proportional to the incident optical ux supplied by the
LED emitter. The diode is operated in the photovoltaic or pho-
toconductive mode. In the photovoltaic mode the diode func-
tions as a current source in parallel with a forward biased
silicon diode.
The magnitude of the output current and voltage is depen-
dent upon the load resistor and the incident LED optical ux.
When operated in the photoconductive mode the diode is
connected to a bias supply which reverse biases the silicon
diode. The magnitude of the output current is directly propor-
tional to the LED incident optical ux.
LED (Light Emitting Diode)
An infrared emitter constructed of AlGaAs that emits at 890
nm operates efciently with drive current from 500 A to 40
mA. Best linearity can be obtained at drive currents between
5.0 mA to 20 mA. Its output ux typically changes by
–0.5%/
°C over the above operational current range.
Absolute Maximum Ratings
Symbol
Min.
Max.
Unit
Emitter
Power Dissipation
(
TA=25°C)
PLED
—
160
mW
Derate Linearly from 25
°C ——
2.13
mW/
°C
Forward Current
lF
—
60
mA
Surge Current
(Pulse width <10
s)
lpk
—
250
mA
Reverse Voltage
VR
—
5.0
V
Thermal Resistance
Rth
—
470
K/W
Junction Temperature
TJ
—
100
°C
Detector
Power Dissipation
PDET
—
50
mA
Derate linearly from 25
°C
——
0.65
mW/
°C
Reverse Voltage
VR
—
50
V
Junction Temperature
TJ
—
100
°C
Thermal Resistance
Rth
—
1500
K/W
Coupler
Total Package
Dissipation at 25
°C
PT
—
210
mW
Derate linearly from 25
°C
——
2.8
mW/
°C
Storage Temperature
TS
–55
150
°C
Operating Temperature
TOP
–55
100
°C
Isolation Test Voltage
—
5300
—
VRMS
Isolation Resistance
VIO=500 V, TA=25°C
VIO=500 V, TA=100°C
—
1012
1011
—
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相关代理商/技术参数 |
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| IL300-DEFG-X001 | 功能描述:高线性光耦合器 High Gain Wide Bandwidth Linear RoHS:否 制造商:Avago Technologies 输入类型:AC/DC 最大正向二极管电压:1.95 V 最大反向二极管电压:2.5 V 最大输入二极管电流:25 mA 最大功率耗散:60 mW 最大工作温度:+ 100 C 最小工作温度:- 55 C 封装 / 箱体:DIP-8 Gull Wing 封装:Tube |
| IL300-DEFG-X006 | 功能描述:高线性光耦合器 Single Linear, High Gain, Wide Bandwidth RoHS:否 制造商:Avago Technologies 输入类型:AC/DC 最大正向二极管电压:1.95 V 最大反向二极管电压:2.5 V 最大输入二极管电流:25 mA 最大功率耗散:60 mW 最大工作温度:+ 100 C 最小工作温度:- 55 C 封装 / 箱体:DIP-8 Gull Wing 封装:Tube |
| IL300-DEFG-X007 | 功能描述:高线性光耦合器 High Gain Wide Bandwidth Linear RoHS:否 制造商:Avago Technologies 输入类型:AC/DC 最大正向二极管电压:1.95 V 最大反向二极管电压:2.5 V 最大输入二极管电流:25 mA 最大功率耗散:60 mW 最大工作温度:+ 100 C 最小工作温度:- 55 C 封装 / 箱体:DIP-8 Gull Wing 封装:Tube |
| IL300-DEFG-X007 | 制造商:Vishay Semiconductors 功能描述:; Leaded Process Compatible:Yes; Peak Re |
| IL300-DEFG-X007T | 功能描述:高线性光耦合器 Single Linear, High Gain, Wide Bandwidth RoHS:否 制造商:Avago Technologies 输入类型:AC/DC 最大正向二极管电压:1.95 V 最大反向二极管电压:2.5 V 最大输入二极管电流:25 mA 最大功率耗散:60 mW 最大工作温度:+ 100 C 最小工作温度:- 55 C 封装 / 箱体:DIP-8 Gull Wing 封装:Tube |
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