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参数资料
| 型号： | ILD256T-1 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光电耦合器 |
| 英文描述： | 1 CHANNEL AC INPUT-TRANSISTOR OUTPUT OPTOCOUPLER |
| 封装： | ROHS COMPLIANT, SOIC-8 |
| 文件页数： | 1/7页 |
| 文件大小： | 102K |
| 代理商： | ILD256T-1 |
Vishay Semiconductors
ILD256T
Document Number 83649
Rev. 1.6, 20-Apr-07
www.vishay.com
1
For technical support, please contact: optocoupler.answers@vishay.com
Optocoupler, Phototransistor Output, Dual Channel, AC Input
FEATURES
Each
Channel:
Guaranteed
CTR
Symmetry, 2:1 Maximum
Bidirectional AC Input
SOIC-8 Surface Mountable Package
Isolation Test Voltage, 4000 VRMS
Standard Lead Spacing, 0.05
Available only on Tape and Reel Option
(Conforms to EIA Standard 481-2)
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
i179044
1
2
3
4
8
7
6
5
E
C
E
A/C
C/A
A/C
C/A
DESCRIPTION
The ILD256T is a dual channel optocoupler. Each
channel consists of two infrared emitters coupled to a
silicon NPN phototransistor detector.
These circuit elements are constructed with a standard
SOIC-8A footprint.
The product is well suited for telecom applications
such as ring detection or off/on hook status, given its
bidirectional LED input and guaranteed current
transfer ratio (CTR) of 20 % at IF = 10 mA.
AGENCY APPROVALS
UL1577, File No. E52744 System Code Y
DIN EN 60747-5-2 (VDE0884)
Available with Option 1
APPLICATIONS
Telecom applications
ring detection off/on hook
status
Note:
For additional information on the available options refer to Option Information.
ORDER INFORMATION
PART
REMARKS
ILD256T
CTR > 20 %, SOIC-8
ABSOLUTE MAXIMUM RATINGS1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Forward continuous current
IF
30
mA
Power dissipation
Pdiss
50
mW
Derate linearly from 25 °C
0.66
mW/°C
OUTPUT
Collector-emitter breakdown
voltage
BVCEO
70
V
Emitter-collector breakdown
voltage
BVECO
7.0
V
Power dissipation
Pdiss
125
mW
Derate linearly from 25 °C
1.67
mW/°C
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| ILD2-X001 | 功能描述:晶体管输出光电耦合器 Phototransistor Out Dual CTR > 100% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
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