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参数资料
| 型号： | ILD256T-1 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光电耦合器 |
| 英文描述： | 1 CHANNEL AC INPUT-TRANSISTOR OUTPUT OPTOCOUPLER |
| 封装： | ROHS COMPLIANT, SOIC-8 |
| 文件页数： | 4/7页 |
| 文件大小： | 102K |
| 代理商： | ILD256T-1 |
www.vishay.com
4
Document Number 83649
Rev. 1.6, 20-Apr-07
Vishay Semiconductors
ILD256T
For technical support, please contact: optocoupler.answers@vishay.com
Figure 7. Photocurrent vs. LED Current
Figure 8. Base Current vs. IF and HFE
Figure 9. Normalized HFE vs. Base Current and Temp.
iil256at_07
0.1
10
100
1000
100
10
1
0.1
25 °C
70 °C
IF - LED Current (mA)
I CB
-Photoc
u
rrent
(
A)
1
iil256at_08
1
10
100
1000
700
600
500
400
300
200
100
10
1
0.1
IB - Base Current (A)
HFE
-
Transistor
Gain
I F
-LED
C
u
rrent
(mA)
V CE = 0.4 V
iil256at_09
1
10
100
1000
1.2
1.0
0.8
0.6
0.4
NHFE - 20 °C
NHFE 25 °C
NHFE 50 °C
NHFE 70 °C
IB - Base Current (A)
N
ormalized
HFE
Normalized to:
IB = 10 A
VCE = 10
Figure 10. Normalized Saturated HFE vs. Base Current
Figure 11. Base Emitter Voltage vs. Base Current
Figure 12. Collector-Emitter Leakage Current vs.Temp.
iil256at_10
1
10
100
1000
1.5
1.0
0.5
0.0
TA = - 20 °C
TA = 25 °C
TA = 50 °C
TA = 70 °C
IB - Base Current (A)
N
ormalized
Sat
u
rated
HF
Normalized to:
HFE at VCE = 10 V
ICB = 10 A
VCE(sat) = 0.4 V
iil256at_11
0.4
0.5
0.6
0.7
0.8
1000
100
10
1
0.1
0.01
0.001
VBE - Base Emitter Voltage (V)
I B
-Base
C
u
rrent
(
A)
iil256at_12
- 20
0
20
40
60
80
100
10 5
10 4
10 3
10 2
10 1
10 0
10 -1
10 -2
TA - Ambient Temperature (°C)
I CEO
-Collector
Emitter
(nA)
Typical
VCE = 10 V
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