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参数资料
| 型号： | ILH100 |
| 厂商： | SIEMENS A G |
| 元件分类： | 光电耦合器 |
| 英文描述： | HERMETIC PHOTOTRANSISTOR OPTOCOUPLER |
| 中文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封装： | HERMETIC SEALED, DIP-8 |
| 文件页数： | 1/7页 |
| 文件大小： | 215K |
| 代理商： | ILH100 |
5–1
FEATURES
Operating Temperature Range,
–55
°
C to +125
°
Current Transfer Ratio Guaranteed from
–55
°
C to +100
°
C Ambient Temperature Range
High Current Transfer Ratio at Low Input Cur-
rent
Isolation Test Voltage, 3000 VDC
Base Lead Available for Transistor Biasing
Standard 8 Pin DIP Package
DESCRIPTION
The ILH100 is designed especially for hi-rel applica-
tions requiring optical isolation with high current
transfer ratio and low saturation VCE. Each opto-
coupler consists of a light emitting diode and a NPN
silicon phototransistor mounted and coupled in an 8
pin hermetically sealed DIP package. The ILH100's
low input current makes it well suited for direct
CMOS to LSTTL/TTL interfaces.
C
Maximum Ratings
Emitter
Reverse Voltage ................................................................................6.0 V
Forward Current..............................................................................60 mA
Peak Forward Current
...................................................................... 1 A
Power Dissipation.........................................................................150 mW
Derate Linearly from 25
°
C ........................................................1.5 mW/
Detector
Collector–Emitter Voltage...................................................................70 V
Emitter–Base Voltage ...........................................................................7 V
Collector–Base Voltage .....................................................................70 V
Continuous Collector Current..........................................................50 mA
Power Dissipation.........................................................................300 mW
Derate Linearly from 25
°
C ........................................................3.0 mW/
Package
Input–Output Isolation Test Voltage
Storage Temperature Range..........................................–65
Operating Temperature Range..........................................–55 to +125
J unction Temperature......................................................................150
Soldering Time at 240
°
C, 1.6 mm from case ................................10 sec.
Power Dissipation.........................................................................350 mW
Derate Linearly from 25
°
C ........................................................3.5 mW/
(1)
°
C
°
C
(2)
..................................... 3000 VDC
°
C to +150
°
°
°
C
C
C
°
C
Notes:
1. Values applies for P
2. Measured between pins 1,2,3 and 4 shorted together and pins 5,6,7 and 8
shorted together. T
A
=25
°
C and duration=1 second, RH=45%.
W
≤
1 ms, PRR￡300 pps.
Dimensions in inches (mm)
.390
±
.005
(9.91
±
.13)
1 2 3 4
8 7 6 5
Siemens
XXX XXXX
XXYY
.320
(8.13)
max.
.125
(3.18)
min.
.018
±
.002
(.46
±
.05)
.100
±
.010
(2.54
±
.25)
.020
(.51)
min.
.150
(3.81)
max.
.010
±
.002
(.25
±
.05)
.300
(7.62)
typ.
Cathode
Anode
Base
7
Collector
Emitter
6
5
3
2
ILH100
HERMETIC PHOTOTRANSISTOR
OPTOCOUPLER
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