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参数资料
| 型号： | ILH100 |
| 厂商： | SIEMENS A G |
| 元件分类： | 光电耦合器 |
| 英文描述： | HERMETIC PHOTOTRANSISTOR OPTOCOUPLER |
| 中文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封装： | HERMETIC SEALED, DIP-8 |
| 文件页数： | 2/7页 |
| 文件大小： | 215K |
| 代理商： | ILH100 |
5–2
ILH100
Characteristics
(T
Α
=25
°
C, unless otherwise specified)
Typical Switching Speeds
(T
A
=25
°
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Emitter
Forward Voltage
Reverse Breakdown Voltage
Reverse Current
Capacitance
Thermal Resistance
Detector
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Emitter Leakage Current
DC Forward Current Gain
Saturated DC Forward Gain
Capacitance
V
V
I
R
C
R
F
1.45
1.7
V
V
μ
pF
°
C/W
I
I
V
V
J unction to Lead
F
=60 mA
=10
=6 V
=0 V, f=1 MHz
BR
6
R
μ
A
0.01
20
220
10
A
R
J
F
TH
V
V
I
CEO
HFE
HFE
C
CE
C
CB
C
EB
R
TH
CE(sat)
0.25
0.65
5
400
200
6.8
8.5
11
220
0.4
V
V
nA
I
I
V
V
V
V
B
=20
=20
=10 V
=10 V, I
=0.4 V, I
=5 V, f=1 MHz
μ
μ
A, I
A
CE
=1 mA
BE
B
50
750
325
CE
250
125
CE
B
=20
=20
μ
μ
A
A
(sat)
CE
B
pF
pF
pF
°
C/W
CE
Thermal Resistance
Coupled Characteristics (-55
Saturated Current Transfer Ratio
Current Transfer Ratio, Collector-Emitter
J unction to Lead
°
C to 100
°
C)
CTR
(sat)
70
210
250
%
I
F
=10 mA V
CE
=0.4 V
CTE
ce
100
300
450
%
I
F
=10 mA, V
CE
=10 V
Current Transfer Ratio, Collector-Base
CTR
cb
0.4
0.7
0.9
%
I
F
=10 mA, V
CB
=9.3 V
Isolation and Insulation
Common Mode Rejection Output High
CM
H
1000
2000
V/
μ
s
V
I
F
V
I
F
V
V
Relative Humidity
V
IO
3000 VDC, 5 sec.
CM
=0 mA
=500 V
=0 V, 1 MHz
=500 VDC
=500 V
p-p
, V
CC
=5 V, R
L
=1 K
,
Common Mode Rejection Output High
CM
L
1000
2000
V/
μ
s
CM
p-p
, V
CC
=5 V, R
L
=1 K
,
Package Capacitance
Insulation Resistance
Leakage Current, Input-Output
C
R
I
IO
IO
1.5
10
pF
μ
IO
IO
10
11
14
IO
10
A
≤
50%,
Non-Saturated Switching
Symbol
td
tr
ts
tf
tpHL
tpLH
Typ.
0.8
2
0.4
2
1
1.5
Max.
2
5
1.5
5
3
4
Unit
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
Test Condition
Delay
Rise
Storage
Fall
Propagation-High to Low
Propagation-Low to High
Saturated Switching
Delay
Rise
Storage
Fall
Propagation-High to Low
V
R
I
F
50% of V
R
BE
=open
CC
=75
=10 mA
=5 V
L
PP
(1)
td
tr
ts
tf
tpHL
0.7
1
13.5
12
1.4
2
3
30
30
5
μ
μ
μ
μ
μ
s
s
s
s
s
V
V
R
I
F
V
V
R
BE
=open
CE
=0.4 V
=0.4 V
=1 K
=10 mA
=5 V,
TH
=1.5 V
CE
L
CC
Propagation-Low to High
tpLH
15
40
μ
s
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