参数资料
型号: IMP11T110
厂商: Rohm Semiconductor
文件页数: 2/3页
文件大小: 343K
描述: DIODE SW 80V 100MA SOT-457 TR
产品培训模块: Diodes Overview
标准包装: 3,000
电压 - 在 If 时为正向 (Vf)(最大): 1.2V @ 100mA
电流 - 在 Vr 时反向漏电: 100nA @ 70V
电流 - 平均整流 (Io)(每个二极管): 100mA
电压 - (Vr)(最大): 80V
反向恢复时间(trr): 4ns
二极管类型: 标准
速度: 小信号 =< 200mA(Io),任意速度
二极管配置: 2 对共阳极
安装类型: 表面贴装
封装/外壳: SC-74,SOT-457
供应商设备封装: 6-SMD
包装: 带卷 (TR)
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
IMP11
 
1
10
100
0.1
1
TIME:t(ms)
10
100
t
Ifsm
1
10
100
1000
0.001 0.01 0.1 1 10 100 1000TIME:t(s)
Rth(j-a)
Rth(j-c)
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(nA)
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
IFSM DISRESION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM-t CHARACTERISTICS
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
trr DISPERSION MAP
REVERSE RECOVERY TIME:trr(ns)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
0.1
1
10
100
0 100 200 300 400 500 600 700 800 900 1000
Ta=-25℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta=150℃
0.1
1
10
100
1000
10000
100000
0 10203040506070
Ta=125℃
Ta=-25℃
Ta=25℃
Ta=75℃
Ta=150℃
0.1
1
10
0 5 10 15 20
f=1MHz
850
860
870
880
890
900
AVE:877.0mV
Ta=25℃
IF=100mA
n=30pcs
0
10
20
30
40
50
60
70
80
90
100
Ta=25℃
VR=70V
n=10pcs
AVE:17.93nA
AVE:1.710pF
Ta=25℃
VR=6V
f=1MHz
n=10pcs
0
5
10
15
20
AVE:2.50A
AVE:1.93ns
Ta=25℃
VR=6V
IF=5mA
RL=50Ω
n=10pcs
0
1
2
3
4
5
1 10 100
8.3ms
8.3ms
Ifsm
1cyc
0
1
2
3
4
5
6
7
8
9
10
AVE:1.32kV
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
AVE:5.47kV
8.3ms
Ifsm
1cyc
1ms
IM=1mA IF=10mA
300us
time
Mounted on epoxy board
2/2
2011.06 - Rev.B
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