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| 型号： | ISL9K1560G3 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 648K |
| 描述： | DIODE DUAL 600V 15A TO-247 |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 标准包装： | 150 |
| 系列： | Stealth™ |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 2.2V @ 15A |
| 电流 - 在 Vr 时反向漏电： | 100µA @ 600V |
| 电流 - 平均整流 (Io)（每个二极管）： | 15A |
| 电压 - (Vr)（最大）： | 600V |
| 反向恢复时间(trr)： | 40ns |
| 二极管类型： | 标准 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 通孔，径向 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 其它名称： | ISL9K1560G3-ND ISL9K1560G3FS |
ISL9K1560G3 — STEALTH? Dual Diode
ISL9K1560G3
30
A,
600
V
STEALTH? Dual Diode
The ISL9K1560G3 is a STEALTH? dual diode
optimized for low loss performance in high frequency
hard switched applications. The STEALTH? family
exhibits low reverse recovery current
(IRR) and
exceptionallysoft recovery under typical operating
conditions. This device is intended for use as a free
wheeling or boost diode in power supplies and other
power switching applications. The low IRR
and short ta
phase reduce loss in switching transistors. The soft
recovery minimizes ringing, expanding the range of
conditions under which the diode may
be operated
without the use of additional snubber circuitry. Consider
using the STEALTH? diode with an SMPS IGBT to
provide the most efficient and highest power density
design at lower cost.
Features
?
Stealth Recovery trr
=
29.4 ns (@ IF
= 15 A)
? Max Forward Voltage, VF
= 2.2 V (@ T
C
= 25°C)
?
600
V Reverse Voltage and High Reliability
? Avalanche Energy Rated
? RoHS Compliant
Applications
Switch Mode Power Supplies
Hard Switched PFC Boost Diode
UPS Free Wheeling Diode
Motor Drive FWD
SMPS FWD
Snubber Diode
Device Maximum Ratings (per leg)
TC
= 25°C unless otherwise noted
Symbol
Parameter
Rating
Unit
VRRM
Repetitive Peak Reverse Voltage
600
V
VRWM
Working Peak Reverse Voltage
600
V
VR
DC Blocking Voltage
600
V
IF(AV)
Average Rectified Forward Current (TC
= 145
oC)
Total Device Current (Both Legs)
15
30
A
A
IFRM
Repetitive Peak Surge Current (20kHz Square Wave)
30
A
IFSM
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
200
A
PD
Power Dissipation
150
W
EAVL
Avalanche Energy (1A, 40mH)
20
mJ
TJ, TSTG
Operating and Storage Temperature Range
-55 to 175 °C
TL
TPKG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
300
260
°C
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
JEDEC STYLE TO-247
A1
K
A2
CATHODE
(BOTTOM SIDE
CATHODE
ANODE 2
ANODE 1
METAL)
Package
Symbol
www.fairchildsemi.com
1
?2001
Fairchild Semiconductor Corporation
ISL9K1560G3
Rev.
C1
Description
November 2013
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL9K1560G3 | 制造商:Fairchild Semiconductor Corporation 功能描述:Fast Recovery Power Rectifier |
| ISL9K1560G3_Q | 功能描述:整流器 15A 600V RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| ISL9K18120G3 | 功能描述:整流器 18A 1200V Stealth RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| ISL9K18120G3_Q | 功能描述:整流器 18A 1200V Stealth RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| ISL9K30120G3 | 功能描述:整流器 30a 1200V Stealth Dual RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
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