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参数资料
| 型号： | IN74LV00 |
| 厂商： | INTEGRAL JOINT STOCK COMPANY |
| 英文描述： | Quad 2-Input NAND Gate |
| 中文描述： | 四2输入与非门 |
| 文件页数： | 2/5页 |
| 文件大小： | 41K |
| 代理商： | IN74LV00 |
IN74LV00
2
INTEGRAL
MAXIMUM RATINGS
*
Symbol
Parameter
Value
Unit
V
CC
I
IK
*
1
I
OK
*
2
I
O
*
3
DC supply voltage (Referenced to GND)
-0.5
÷
+5.0
±
20
±
50
±
25
V
DC input diode current
mA
DC output diode current
mA
DC output source or sink current
-bus driver outputs
mA
I
CC
DC V
CC
current for types with
- bus driver outputs
±
50
mA
I
GND
DC GND current for types with
- bus driver outputs
±
50
mA
P
D
Power dissipation per package, plastic DIP+
SOIC package+
750
500
mW
Tstg
Storage temperature
-65
÷
+150
°
C
°
C
T
L
Lead temperature, 1.5 mm from Case for 10 seconds
(Plastic DIP ), 0.3 mm (SOIC Package)
260
*
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 12 mW/
°
C from 70
°
to 125
°
C
SOIC Package: : - 8 mW/
°
C from 70
°
to 125
°
C
*
1
: V
I
<
-0.5 or V
I
>
V
CC
+0.5V
*
2
: Vo
<
-0.5 or Vo
>
V
CC
+0.5V
*
3
: -0.5V
<
Vo
<
V
CC
+0.5V
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
1.2
3.6
V
V
IN
, V
OUT
DC Input Voltage, Output Voltage (Referenced to GND)
0
V
CC
V
T
A
Operating Temperature, All Package Types
-40
+125
°
C
t
r
, t
f
Input Rise and Fall Time
V
CC
=1.2 V
V
CC
=2.0 V
V
CC
=3.0 V
V
CC
=3.6 V
0
0
0
0
1000
700
500
400
ns
This device contains protection circuitry to guard against damage due to high static voltages or electric
fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages
to this high-impedance circuit. For proper operation, V
IN
and V
OUT
should be constrained to the range GND
≤
(V
IN
or
V
OUT
)
≤
V
CC
.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V
CC
). Unused
outputs must be left open.
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