参数资料
型号: IPA60R299CP
厂商: INFINEON TECHNOLOGIES AG
英文描述: CoolMOS Power Transistor
中文描述: 的CoolMOS功率晶体管
文件页数: 2/10页
文件大小: 275K
代理商: IPA60R299CP
IPA60R299CP
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous diode forward current
2)
I
S
A
Diode pulse current
3)
I
S,pulse
34
Reverse diode d
v
/d
t
5)
d
v
/d
t
15
V/ns
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
-
-
3.8
K/W
R
thJA
leaded
-
-
80
Soldering temperature,
wavesoldering only allowed at leads
T
sold
1.6 mm (0.063 in.)
from case for 10 s
-
-
260
°C
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V,
I
D
=250 μA
600
-
-
V
Gate threshold voltage
V
GS(th)
V
DS
=
V
GS
,
I
D
=0,44 mA
2.5
3
3.5
Zero gate voltage drain current
I
DSS
V
DS
=600 V,
V
GS
=0 V,
T
j
=25 °C
-
-
1
μA
V
DS
=600 V,
V
GS
=0 V,
T
j
=150 °C
-
10
-
Gate-source leakage current
I
GSS
V
GS
=20 V,
V
DS
=0 V
-
-
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10 V,
I
D
=6.6 A,
T
j
=25 °C
-
0.27
0.299
V
GS
=10 V,
I
D
=6.6 A,
T
j
=150 °C
-
0.73
Gate resistance
R
G
f
=1 MHz, open drain
-
1.9
-
Values
Thermal resistance, junction -
ambient
Value
T
C
=25 °C
11
Rev. 1.3
page 2
2005-12-22
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