参数资料
型号: IPA60R299CP
厂商: INFINEON TECHNOLOGIES AG
英文描述: CoolMOS Power Transistor
中文描述: 的CoolMOS功率晶体管
文件页数: 3/10页
文件大小: 275K
代理商: IPA60R299CP
IPA60R299CP
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C
iss
-
1100
-
pF
Output capacitance
C
oss
-
60
-
Effective output capacitance, energy
related
6)
C
o(er)
-
46
-
Effective output capacitance, time
related
7)
C
o(tr)
-
120
-
Turn-on delay time
t
d(on)
-
10
-
ns
Rise time
t
r
-
5
-
Turn-off delay time
t
d(off)
-
40
-
Fall time
t
f
-
5
-
Gate Charge Characteristics
Gate to source charge
Q
gs
-
5
-
nC
Gate to drain charge
Q
gd
-
7.6
-
Gate charge total
Q
g
-
22
29
Gate plateau voltage
V
plateau
-
5.0
-
V
Reverse Diode
Diode forward voltage
V
SD
V
GS
=0 V,
I
F
=6.6 A,
T
j
=25 °C
-
0.9
1.2
V
Reverse recovery time
t
rr
-
300
-
ns
Reverse recovery charge
Q
rr
-
3.9
-
μC
Peak reverse recovery current
I
rrm
-
26
-
A
1)
J-STD20 and JESD22
2)
Limited only by maximum temperature
3)
Pulse width
t
p
limited by
T
j,max
4)
Repetitive avalanche causes additional power losses that can be calculated as
P
AV
=
E
AR
*
f.
5)
I
SD
<=I
D
, di/dt<=200A/μs, V
DClink
=400V, V
peak
<V
(BR)DSS
, T
j
<T
jmax
, identical low side and high side switch.
6)
C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS.
7)
C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS.
V
R
=400 V,
I
F
=
I
S
,
d
i
F
/d
t
=100 A/μs
Values
V
GS
=0 V,
V
DS
=100 V,
f
=1 MHz
V
DD
=400 V,
V
GS
=10 V,
I
D
=6,6 A,
R
G
=4,3
V
DD
=400 V,
I
D
=6.6 A,
V
GS
=0 to 10 V
V
GS
=0 V,
V
DS
=0 V
to 480 V
Rev. 1.3
page 3
2005-12-22
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