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参数资料
| 型号： | IPA60R385CP |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | CoolMOS Power Transistor |
| 中文描述： | 的CoolMOS功率晶体管 |
| 文件页数： | 3/10页 |
| 文件大小： | 272K |
| 代理商： | IPA60R385CP |
IPA60R385CP
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C
iss
-
790
-
pF
Output capacitance
C
oss
-
38
-
Effective output capacitance, energy
related
6)
C
o(er)
-
36
-
Effective output capacitance, time
related
7)
C
o(tr)
-
96
-
Turn-on delay time
t
d(on)
-
10
-
ns
Rise time
t
r
-
5
-
Turn-off delay time
t
d(off)
-
40
-
Fall time
t
f
-
5
-
Gate Charge Characteristics
Gate to source charge
Q
gs
-
4
-
nC
Gate to drain charge
Q
gd
-
6
-
Gate charge total
Q
g
-
17
22
Gate plateau voltage
V
plateau
-
5.0
-
V
Reverse Diode
Diode forward voltage
V
SD
V
GS
=0 V,
I
F
=5.2 A,
T
j
=25 °C
-
0.9
1.2
V
Reverse recovery time
t
rr
-
260
-
ns
Reverse recovery charge
Q
rr
-
3.1
-
μC
Peak reverse recovery current
I
rrm
-
24
-
A
1)
J-STD20 and JESD22
2)
Limited only by maximum temperature
3)
Pulse width
t
p
limited by
T
j,max
4)
Repetitive avalanche causes additional power losses that can be calculated as
P
AV
=
E
AR
*
f.
5)
I
SD
<=I
D
, di/dt<=400A/μs, V
DClink
=400V, V
peak
<V
(BR)DSS
, T
j
<T
jmax
, identical low side and high side switch.
6)
C
o(er)
is a fixed capacitance that gives the same stored energy as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS.
7)
C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS.
V
R
=400 V,
I
F
=
I
S
,
d
i
F
/d
t
=100 A/μs
Values
V
GS
=0 V,
V
DS
=100 V,
f
=1 MHz
V
DD
=400 V,
V
GS
=10 V,
I
D
=12 A,
R
G
=3.3
V
DD
=400 V,
I
D
=5.2 A,
V
GS
=0 to 10 V
V
GS
=0 V,
V
DS
=0 V
to 480 V
Rev. 1.5
page 3
2006-01-04
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IPA60R385CP_10 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:CoolMos Power Transistor |
| IPA60R385CPXKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 9A 3-Pin(3+Tab) TO-220FP 制造商:Infineon Technologies AG 功能描述:COOL MOS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 650V 9A TO220-3 |
| IPA60R450E6 | 功能描述:MOSFET N-CH 600V 9.2A TO220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:CoolMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IPA60R450E6XKSA1 | 制造商:Infineon Technologies AG 功能描述:COOL MOS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 600V 9.2A TO220 |
| IPA60R520C6 | 功能描述:MOSFET N-CH 600V 8.1A TO220-FP RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:CoolMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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