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参数资料
| 型号： | IPB77N06S3-09 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢-T Power-Transistor |
| 中文描述： | ㈢的OptiMOS - T的功率晶体管 |
| 文件页数： | 3/8页 |
| 文件大小： | 165K |
| 代理商： | IPB77N06S3-09 |
IPB77N06S3-09
IPI77N06S3-09, IPP77N06S3-09
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
2)
Input capacitance
C
iss
-
5335
-
pF
Output capacitance
C
oss
-
812
-
Reverse transfer capacitance
C
rss
-
775
-
Turn-on delay time
t
d(on)
-
29
-
ns
Rise time
t
r
-
51
-
Turn-off delay time
t
d(off)
-
29
-
Fall time
t
f
-
51
-
Gate Charge Characteristics
2)
Gate to source charge
Q
gs
-
41
-
nC
Gate to drain charge
Q
gd
-
17
-
Gate charge total
Q
g
-
77
103
Gate plateau voltage
V
plateau
-
7.1
-
V
Reverse Diode
Diode continous forward current
I
S
-
-
77
A
Diode pulse current
2)
I
S,pulse
-
-
308
Diode forward voltage
2)
V
SD
V
GS
=0 V,
I
F
=77 A,
T
j
=25 °C
-
1
1.3
V
Reverse recovery time
2)
t
rr
V
R
=27.5 V,
I
F
=
I
S
,
d
i
F
/d
t
=100 A/μs
-
43
-
ns
Reverse recovery charge
2)
Q
rr
-
58
-
nC
1)
Current is limited by bondwire; with an
R
thJC
= 1.4 K/W the chip is able to carry 77A at 25°C. For detailed
information see Application Note ANPS071E at
www.infineon.com/optimos
T
C
=25 °C
Values
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
V
DD
=27.5 V,
V
GS
=10 V,
I
D
=77 A,
R
G
=10
V
DD
=11 V,
I
D
=77 A,
V
GS
=0 to 10 V
2)
Defined by design. Not subject to production test.
3)
See diagrams 12 and 13.
4)
Qualified at -5V and +20V.
5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 μm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 0.9
page 3
2005-09-16
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相关代理商/技术参数 |
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|---|---|
| IPB77N06S3-09_07 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS-T2 Power-Transistor |
| IPB77N06S309T | 制造商:Infineon Technologies AG 功能描述:GREEN |
| IPB77N06S309XT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 55V 77A 3-Pin(2+Tab) TO-263 |
| IPB79CN10N G | 功能描述:MOSFET N-CH 100 V 79 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPB79CN10NGXT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 100V 13A 3-Pin(2+Tab) TO-263 |
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