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| 型号： | IPD03N03LA |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Ideal for high-frequency dc/dc converters Qualified according to JEDEC for target applications |
| 中文描述： | 适用于高频率DC / DC转换器，合格为目标，根据JEDEC的应用 |
| 文件页数： | 1/9页 |
| 文件大小： | 304K |
| 代理商： | IPD03N03LA |
IPD03N03LB G
Opti
MOS
2 Power-Transistor
Features
Ideal for high-frequency dc/dc converters
Qualified according to JEDEC
1)
for target applications
N-channel, logic level
Excellent gate charge x
R
DS(on)
product (FOM)
Superior thermal resistance
175 °C operating temperature
Pb-free lead plating; RoHS compliant
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I
D
T
C
=25 °C
2)
90
A
T
C
=100 °C
90
Pulsed drain current
I
D,pulse
T
C
=25 °C
3)
360
Avalanche energy, single pulse
E
AS
I
D
=90 A,
R
GS
=25
240
mJ
Reverse diode d
v
/d
t
d
v
/d
t
I
D
=90 A,
V
DS
=20 V,
d
i
/d
t
=200 A/μs,
T
j,max
=175 °C
6
kV/μs
Gate source voltage
4)
V
GS
±20
V
Power dissipation
P
tot
T
C
=25 °C
115
W
Operating and storage temperature
T
j
,
T
stg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
Value
V
DS
30
V
R
DS(on),max
3.3
m
I
D
90
A
Product Summary
Type
Package
Ordering Code
Marking
IPD03N03LB G
P-TO252-3-11
Q67042-S4260
03N03LB
PG-TO252-3-11
Rev. 1.11
page 1
2004-12-16
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相关代理商/技术参数 |
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| IPD03N03LA G | 功能描述:MOSFET N-CH 25V 90A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPD03N03LAG | 制造商:Infineon Technologies AG 功能描述:SP000016406_POWER MOS EOL310709 |
| IPD03N03LAGXT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 25V 90A 3-Pin(2+Tab) TO-252 |
| IPD03N03LB | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS 2 Power-Transistor |
| IPD03N03LB G | 功能描述:MOSFET N-CH 30V 90A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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