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参数资料
| 型号： | IPD03N03LA |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Ideal for high-frequency dc/dc converters Qualified according to JEDEC for target applications |
| 中文描述： | 适用于高频率DC / DC转换器，合格为目标，根据JEDEC的应用 |
| 文件页数： | 4/9页 |
| 文件大小： | 304K |
| 代理商： | IPD03N03LA |
IPD03N03LB G
1 Power dissipation
2 Drain current
P
tot
=f(
T
C
)
I
D
=f(
T
C
);
V
GS
≥
10 V
3 Safe operating area
4 Max. transient thermal impedance
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0
Z
thJC
=f(
t
p
)
parameter:
t
p
parameter:
D
=
t
p
/
T
1 μs
10 μs
100 μs
1 ms
10 ms
DC
1
10
100
1000
0.1
1
10
100
V
DS
[V]
I
D
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
-6
10
-5
10
-4
10
-3
t
p
[s]
10
-2
10
-1
10
0
0.001
0.01
0.1
1
10
0
0
0
0
0
0
1
Z
t
0
20
40
60
80
100
120
0
50
100
150
200
T
C
[°C]
P
t
0
20
40
60
80
100
0
50
100
150
200
T
C
[°C]
I
D
Rev. 1.11
page 4
2004-12-16
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相关代理商/技术参数 |
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|---|---|
| IPD03N03LA G | 功能描述:MOSFET N-CH 25V 90A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPD03N03LAG | 制造商:Infineon Technologies AG 功能描述:SP000016406_POWER MOS EOL310709 |
| IPD03N03LAGXT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 25V 90A 3-Pin(2+Tab) TO-252 |
| IPD03N03LB | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS 2 Power-Transistor |
| IPD03N03LB G | 功能描述:MOSFET N-CH 30V 90A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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