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参数资料
| 型号： | IPD03N03LA |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Ideal for high-frequency dc/dc converters Qualified according to JEDEC for target applications |
| 中文描述： | 适用于高频率DC / DC转换器，合格为目标，根据JEDEC的应用 |
| 文件页数： | 5/9页 |
| 文件大小： | 304K |
| 代理商： | IPD03N03LA |
IPD03N03LB G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I
D
=f(
V
DS
);
T
j
=25 °C
R
DS(on)
=f(
I
D
);
T
j
=25 °C
parameter:
V
GS
parameter:
V
GS
7 Typ. transfer characteristics
8 Typ. forward transconductance
I
D
=f(
V
GS
); |
V
DS
|>2|
I
D
|
R
DS(on)max
g
fs
=f(
I
D
);
T
j
=25 °C
parameter:
T
j
3 V
3.2 V
4.1 V
3.5 V
3.8 V
4.5 V
10 V
0
2
4
6
8
10
12
0
20
40
60
80
100
I
D
[A]
R
D
]
25 °C
175 °C
0
20
40
60
80
100
120
140
160
180
200
0
1
2
3
4
5
V
GS
[V]
I
D
0
20
40
60
80
100
120
140
160
180
0
20
40
60
80
100
I
D
[A]
g
f
2.8 V
3 V
3.2 V
3.5 V
3.8 V
4.1 V
4.5 V
10 V
0
20
40
60
80
100
120
140
160
180
200
0
1
2
3
V
DS
[V]
I
D
Rev. 1.11
page 5
2004-12-16
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相关代理商/技术参数 |
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|---|---|
| IPD03N03LA G | 功能描述:MOSFET N-CH 25V 90A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPD03N03LAG | 制造商:Infineon Technologies AG 功能描述:SP000016406_POWER MOS EOL310709 |
| IPD03N03LAGXT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 25V 90A 3-Pin(2+Tab) TO-252 |
| IPD03N03LB | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS 2 Power-Transistor |
| IPD03N03LB G | 功能描述:MOSFET N-CH 30V 90A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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