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参数资料
| 型号： | IPD33CN10NG |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢2 Power-Transistor |
| 中文描述： | 的OptiMOS㈢2功率晶体管 |
| 文件页数： | 3/13页 |
| 文件大小： | 707K |
| 代理商： | IPD33CN10NG |
IPB35CN10N G IPD33CN10N G
IPI35CN10N G IPP35CN10N G IPU33CN10N G
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C
iss
-
1180
1570
pF
Output capacitance
C
oss
-
175
233
Reverse transfer capacitance
C
rss
-
13
20
Turn-on delay time
t
d(on)
-
11
17
ns
Rise time
t
r
-
21
31
Turn-off delay time
t
d(off)
-
17
25
Fall time
t
f
-
4
6
Gate Charge Characteristics
5)
Gate to source charge
Q
gs
-
7
9
nC
Gate to drain charge
Q
gd
-
4
6
Switching charge
Q
sw
-
7
11
Gate charge total
Q
g
-
18
24
Gate plateau voltage
V
plateau
-
5.6
-
V
Output charge
Q
oss
V
DD
=50 V,
V
GS
=0 V
-
18
24
nC
Reverse Diode
Diode continous forward current
I
S
-
-
27
A
Diode pulse current
I
S,pulse
-
-
108
Diode forward voltage
V
SD
V
GS
=0 V,
I
F
=27 A,
T
j
=25 °C
-
1
1.2
V
Reverse recovery time
t
rr
-
77
ns
Reverse recovery charge
Q
rr
-
154
-
nC
5)
See figure 16 for gate charge parameter definition
V
R
=50 V,
I
F
=
I
S
,
d
i
F
/d
t
=100 A/μs
T
C
=25 °C
Values
V
GS
=0 V,
V
DS
=50 V,
f
=1 MHz
V
DD
=50 V,
V
GS
=10 V,
I
D
=27 A,
R
G
=1.6
V
DD
=50 V,
I
D
=27 A,
V
GS
=0 to 10 V
Rev.1.02
page 3
2006-06-02
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