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参数资料
| 型号： | IPD350N06LG |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢ Power-Transistor |
| 中文描述： | 的OptiMOS㈢功率晶体管 |
| 文件页数： | 2/9页 |
| 文件大小： | 392K |
| 代理商： | IPD350N06LG |
IPD350N06L G
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
-
-
2.2
K/W
SMD version, device on PCB
R
thJA
minimal footprint
-
-
75
6 cm
2
cooling area
2)
-
-
50
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
60
-
-
V
Gate threshold voltage
V
GS(th)
V
DS
=
V
GS
,
I
D
=28 μA
1.2
1.6
2
Zero gate voltage drain current
I
DSS
V
DS
=60 V,
V
GS
=0 V,
T
j
=25 °C
-
0.01
1
μA
V
DS
=60 V,
V
GS
=0 V,
T
j
=125 °C
-
1
100
Gate-source leakage current
I
GSS
V
GS
=20 V,
V
DS
=0 V
-
1
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10 V,
I
D
=29 A
-
27
35
m
V
GS
=4.5 V,
I
D
=19 A
-
36
47
Gate resistance
R
G
-
1.4
-
Transconductance
g
fs
|
V
DS
|>2|
I
D
|
R
DS(on)max
,
I
D
=29 A
16
32
-
S
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 μm thick) copper area for
drain connection. PCB is vertical in still air.
Values
Rev. 1.1
page 2
2006-05-08
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