参数资料
| 型号： | IPS021S |
| 厂商： | International Rectifier |
| 文件页数： | 2/12页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET LS DRIVER 5A D2PAK |
| 标准包装： | 50 |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 130 毫欧 |
| 电流 - 输出 / 通道： | 1.8A |
| 电流 - 峰值输出： | 10A |
| 电源电压： | 4 V ~ 6 V |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 管件 |
| 其它名称： | *IPS021S |
IPS021(S)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (TAmbient = 25 o C unless otherwise specified). PCB mounting uses the standard foot-
print with 70 μ m copper thickness.
Symbol Parameter
Vds
Maximum drain to source voltage
Min.
—
Max.
47
Units
Test Conditions
Vin
Iin, max
Maximum input voltage
Maximum IN current
-0.3
-10
7
+10
V
mA
Isd cont.
Diode max. continous current (1)
(rth=62 o C/W) IPS021
—
2.8
(rth=10 o C/W) IPS021
—
8
A
(rth=80 o C/W)
Isd pulsed Diode max. pulsed current (1)
IPS021S
—
—
2.2
10A
Pd Maximum power dissipation (1)
(rth=62 o C/W) IPS021
(rth=80 o C/W) IPS021S
—
—
2
1.56
W
ESD1
Electrostatic discharge voltage (Human Body)
—
4
C=100pF, R=1500 ?,
ESD2
T stor.
Electrostatic discharge voltage (Machine Model)
Max. storage temperature
—
-55
0.5
150
kV
C=200pF, R=0 ?, L=10 μ H
Tj max.
Tlead
Max. junction temperature.
Lead temperature (soldering, 10 seconds)
-40
—
150
300
o
C
Thermal Characteristics
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rth
Rth
1
2
Thermal
Thermal
resistance
resistance
free air
junction to case
—
—
60
5
—
—
TO-220
Rth
Rth
1
2
Thermal
Thermal
resistance
resistance
with standard footprint
with 1" square footprint
—
—
80
50
—
—
o
C/W
D 2 PAK (SMD220)
Rth
3
Thermal
resistance
junction to case
—
5
—
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min.
Max.
Units
Vds (max)
Continuous drain to source voltage
—
35
VIH
VIL
I ds
High level input voltage
Low level input voltage
Continuous drain current
4
0
—
6
0.5
1.8
V
A
Tamb=85 o C
( TAmbient = 85 o C, IN = 5V, rth = 60 o C/W, Tj = 125 o C)
Rin Recommended resistor in series with IN pin
Tr-in (max) Max recommended rise time for IN signal (see fig. 2)
0.5
—
5
1
k ?
μ S
Fr-Isc (2)
Max. frequency in short circuit condition (Vcc = 14V)
0
1
kHz
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Appl. Notes.
2
www.irf.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IPS021SPBF | 制造商:International Rectifier 功能描述:Power Switch Lo Side 1.8A 3-Pin(2+Tab) D2PAK |
| IPS021STRL | 制造商:International Rectifier 功能描述:50V5.000ATO-220OUTLINE - Tape and Reel |
| IPS021STRR | 功能描述:功率驱动器IC Prot PWR FET Swich 150mOhm 50V 5A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IPS022G | 功能描述:功率驱动器IC IPS 1 Ch Low Side Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IPS022GPBF | 制造商:International Rectifier 功能描述:MOSFET SMART SWITCH SO-8 |
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