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参数资料
| 型号： | IPS031G |
| 厂商： | International Rectifier |
| 英文描述： | SINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCH |
| 中文描述： | 单/双充分保护功率MOSFET开关 |
| 文件页数： | 1/11页 |
| 文件大小： | 138K |
| 代理商： | IPS031G |
Features
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
IPS031G/IPS032G
SINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCH
Data Sheet No.PD 60151-J
Description
The IPS031G/IPS032G are fully protected single/dual
low side SMART POWER MOSFETs that feature over-
current, over-temperature, ESD protection and drain
to source active clamp.These devices combine a
HEXFET POWER MOSFET and a gate driver. They
offer full protection and high reliability required in
harsh environments. The driver allows short switch-
ing times and provides efficient protection by turning
off the power MOSFET when the temperature ex-
ceeds 165
o
C or when the drain current reaches 12A.
The device restarts once the input is cycled. The
avalanche capability is significantly enhanced by the
active clamp and covers most inductive load demag-
netizations.
Typical Connection
Product Summary
R
ds(on)
70m
(max)
V
clamp
50V
Ishutdown
12A
T
on
/T
off
1.5
μ
s
Load
D
S
control
IN
R in series
(if needed)
Logic signal
www.irf.com
1
Packages
8-Lead SOIC
IPS031G
16-Lead SOIC
IPS032G
(Dual)
(Refer to lead assignment for correct pin assignment)
相关PDF资料 |
PDF描述 |
|---|---|
| IPS032G | SINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCH |
| IPS031S | FULLY PROTECTED POWER MOSFET SWITCH |
| IPS031 | FULLY PROTECTED POWER MOSFET SWITCH |
| IPS03N03LA | Ideal for high-frequency dc/dc converters Qualified according to JEDEC for target applications |
| IPS042G | DUAL FULLY PROTECTED POWER MOSFET SWITCH |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IPS031GPBF | 制造商:International Rectifier 功能描述:Power Switch Lo Side 1.4A 8-Pin SOIC 制造商:International Rectifier 功能描述:MOSFET SMART SWITCH SO-8 |
| IPS031GTR | 功能描述:IC MOSFET PWR SW SGL 12A 8-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 内部开关 系列:- 标准包装:1,000 系列:- 类型:高端/低端驱动器 输入类型:SPI 输出数:8 导通状态电阻:850 毫欧，1.6 欧姆 电流 - 输出 / 通道:205mA，410mA 电流 - 峰值输出:500mA，1A 电源电压:9 V ~ 16 V 工作温度:-40°C ~ 150°C 安装类型:表面贴装 封装/外壳:20-SOIC（0.295"，7.50mm 宽） 供应商设备封装:PG-DSO-20-45 包装:带卷 (TR) |
| IPS031N03L G | 功能描述:MOSFET N-CH 30 V 90 A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPS031N03LG | 制造商:Infineon Technologies AG 功能描述: |
| IPS031N03LGAKMA1 | 制造商:Infineon Technologies AG 功能描述:LV POWER MOS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:OptiMOS 3 Pwr 30V 3.1mOhm 90A |
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