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参数资料
| 型号： | IPS031G |
| 厂商： | International Rectifier |
| 英文描述： | SINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCH |
| 中文描述： | 单/双充分保护功率MOSFET开关 |
| 文件页数： | 2/11页 |
| 文件大小： | 138K |
| 代理商： | IPS031G |
IPS031G/IPS032G
2
www.irf.com
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are ref-
erenced to SOURCE lead. (TAmbient = 25
C unless otherwise specified). PCB mounting uses the standard footprint with 70
μ
m
copper thickness. All Sources leads of each mosfet must be connected together to get full current capability
Symbol Parameter
Vds
Maximum drain to source voltage
Vin
Maximum input voltage
Iin, max
Maximum IN current
Isd
cont.
Min.
—
Max.
47
Units
Test Conditions
-0.3
7
-10
+10
mA
Diode max. continuous current
(1)
(rth=125
o
C/W) IPS031G
(for all sd mosfets, rth=85
o
C/W) IPS032G
Isd
pulsed
Diode max. pulsed current
(1) (for ea. mosfet)
Pd
(rth=125
o
C/W) IPS031G
(for all
Pd mosfets, rth=85
o
C/W) IPS032G
ESD1
Electrostatic discharge voltage
(Human Body)
—
1.4
—
2
—
15
Maximum power dissipation
(1)
—
1
W
—
1.5
—
4
C=100pF, R=1500
,
C=200pF, R=0
,
L=10
μ
H
ESD2
Electrostatic discharge voltage
(Machine Model)
—
0.5
T stor.
Tj max.
Max. storage temperature
-55
150
Max. junction temperature
-40
150
V
A
kV
Symbol Parameter
Rth1
Thermal resistance with standard footprint
Rth2
Thermal resistance with 1" square footprint
Rth1
Thermal resistance with standard footprint
(2 mos on)
(2 mosfets on)
Rth2
Thermal resistance with standard footprint
(1 mos on)
(1 mosfet on)
Rth3
Thermal resistance with 1" square footprint
(2 mos on)
(2 mosfets on)
Min.
—
—
Typ.
100
65
Max. Units Test Conditions
—
—
—
85
—
—
100
—
—
60
—
Thermal Chacteristics
SOIC-8
SOIC-16
o
C/W
o
C
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