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参数资料
| 型号： | IPS031G |
| 厂商： | International Rectifier |
| 英文描述： | SINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCH |
| 中文描述： | 单/双充分保护功率MOSFET开关 |
| 文件页数： | 3/11页 |
| 文件大小： | 138K |
| 代理商： | IPS031G |
IPS031G/IPS032G
www.irf.com
3
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Vds (max)Continuous Drain to Source voltage
VIH
High level input voltage
VIL
Low level input voltage
Ids
Continuous drain current
Tamb=85
o
C
(TAmbient = 85
o
C, IN = 5V, rth = 100
o
C/W, Tj = 125
o
C) IPS031G
(TAmbient = 85
o
C, IN = 5V, rth = 85
o
C/W, Tj = 125
o
C) IPS032G
Rin
Recommended resistor in series with IN pin
Tr-in(max) Max recommended rise time for IN signal (see fig. 2)
Fr-Isc
(2)
Max. frequency in short circuit condition (Vcc = 14V)
Min.
—
4
0
Max. Units
35
6
0.5
—
— 1.65
0.2
—
0
2.2
A
5
1
1
k
μ
S
kHz
V
Symbol Parameter
Rds(on)
ON state resistance Tj = 25
o
C
Rds(on)
ON state resistance Tj = 150
o
C
Idss
Drain to source leakage current
@Tj=25
o
C
Idss2
Drain to source leakage current
@Tj=25
o
C
V
clamp 1
Drain to source clamp voltage 1
V
clamp 2
Drain to source clamp voltage 2
Vin
clamp
IN to source clamp voltage
Vth
IN threshold voltage
Iin, -on
ON state IN positive current
Iin, -off
OFF state IN positive current
Min.
20
—
0
Typ.
45
75
0.5
Max. Units Test Conditions
60
100
25
Vcc = 14V, Tj = 25
o
C
0
5
50
Vcc = 40V, Tj = 25
o
C
47
50
7
1
25
50
52
53
8.1
1.6
90
130
56
60
9.5
2
200
250
Id = 20mA
(see Fig.3 & 4)
Id=Ishutdown
(see Fig.3 & 4)
Iin = 1 mA
Id = 50mA, Vds = 14V
Vin = 5V
Vin = 5V
over-current triggered
Static Electrical Characteristics
(Tj = 25
o
C unless otherwise specified.)
m
Vin = 5V, Ids = 1A
V
μ
A
μ
A
Switching Electrical Characteristics
Vcc = 14V, Resistive Load = 5
(IPS031), Resistive Load = 3
(IPS031S), Rinput = 50
,
100
μ
s pulse,T
j
= 25
o
C, (unless
otherwise specified).
Symbol Parameter
Ton
Turn-on delay time
Tr
Rise time
Trf
Time to 130% final Rds(on)
Toff
Turn-off delay time
Tf
Fall time
Qin
Total gate charge
Min.
0.05
0.4
—
0.8
0.5
—
Typ.
0.3
1
8
2
1.5
1.1
Max. Units Test Conditions
0.6
2
—
3.5
2.5
—
nC
Vin = 5V
See figure 2
See figure 2
μ
s
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