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| 型号： | IR11672ASPBF |
| 厂商： | International Rectifier |
| 文件页数： | 13/26页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER 200V 8-SOIC |
| 标准包装： | 95 |
| 系列： | Advanced Smart Rectifier™ |
| 配置： | 半桥 |
| 输入类型： | 非反相 |
| 延迟时间： | 60ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 电源电压： | 11.4 V ~ 18 V |
| 工作温度： | -25°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
IR11672AS
General Description
The IR11672A Smart Rectifier IC can emulate the operation of diode rectifier by properly driving a Synchronous Rectifier (SR)
MOSFET. The direction of the rectified current is sensed by the input comparator using the power MOSFET R DSon as a shunt
resistance and the GATE pin of the MOSFET is driven accordingly. Internal blanking logic is used to prevent spurious
transitions and guarantee operation in continuous (CCM), discontinuous (DCM) and critical (CrCM) conduction mode.
IR11672A is suitable for Flyback and Resonant Half-Bridge topologies.
V Gate
V DS
V TH2
V TH1
V TH3
Figure 1: Input comparator thresholds
Flyback Application
The modes of operation for a Flyback circuit differ mainly for the turn-off phase of the SR switch, while the turn-on phase of the
secondary switch (which corresponds to the turn off of the primary side switch) is identical.
Turn-on phase
When the conduction phase of the SR FET is initiated, current will start flowing through its body diode, generating a negative
V DS voltage across it. The body diode has generally a much higher voltage drop than the one caused by the MOSFET on
resistance and therefore will trigger the turn-on threshold V TH2 .
At that point the IR11672A will drive the gate of MOSFET on which will in turn cause the conduction voltage VDS to drop down.
This drop is usually accompanied by some amount of ringing, that can trigger the input comparator to turn off; hence, a
Minimum On Time (MOT) blanking period is used that will maintain the power MOSFET on for a minimum amount of time.
The programmed MOT will limit also the minimum duty cycle of the SR MOSFET and, as a consequence, the max duty cycle of
the primary side switch.
DCM/CrCM Turn-off phase
Once the SR MOSFET has been turned on, it will remain on until the rectified current will decay to the level where V DS will cross
the turn-off threshold V TH1 . This will happen differently depending on the mode of operation.
In DCM the current will cross the threshold with a relatively low dI/dt. Once the threshold is crossed, the current will start flowing
again thru the body diode, causing the V DS voltage to jump negative. Depending on the amount of residual current, V DS may
trigger once again the turn on threshold: for this reason V TH2 is blanked for a certain amount of time (T BLANK ) after V TH1 has been
triggered.
The blanking time is internally set. As soon as V DS crosses the positive threshold V TH3 also the blanking time is terminated and
the IC is ready for next conduction cycle.
13
www.irf.com
? 2013 International Rectifier
Nov 6, 2013
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相关代理商/技术参数 |
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| IR11672ASTRPBF | 功能描述:功率驱动器IC SmartRectifier Cntrl IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR1167ASPBF | 功能描述:IC MOSFET DRIVER N-CHAN 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:SmartRectifier™ 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| IR1167ASPBF_09 | 制造商:IRF 制造商全称:International Rectifier 功能描述:SmartRectifierTM CONTROL IC |
| IR1167ASTRPBF | 功能描述:功率驱动器IC SmartRectifier Cntrl IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR1167ASTRPBF-CUT TAPE | 制造商:IR 功能描述:IR1167ASPbF Series 18 V 500 kHz SMT Smart RectifierTM Control IC - SOIC-8 |
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