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| 型号： | IR2011S |
| 厂商： | International Rectifier |
| 文件页数： | 1/17页 |
| 文件大小： | 0K |
| 描述： | HI/LO SIDE DRVR 8SOIC |
| 标准包装： | 95 |
| 配置： | 高端和低端，独立 |
| 输入类型： | 非反相 |
| 延迟时间： | 80ns |
| 电流 - 峰： | 1A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 200V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 管件 |
| 其它名称： | *IR2011S |
Data Sheet No.PD60217 revB
IR2011( S) & (PbF )
HIGH AND LOW SIDE DRIVER
Features
· Floating channel designed for bootstrap operation
Fully operational up to +200V
Tolerant to negative transient voltage, dV/dt immune
· Gate drive supply range from 10V to 20V
· Independent low and high side channels
· Input logicHIN/LIN active high
· Undervoltage lockout for both channels
· 3.3V and 5V input logic compatible
· CMOS Schmitt-triggered inputs with pull-down
· Matched propagation delay for both channels
· Also available LEAD-FREE (PbF)
Applications
· Audio Class D amplifiers
· High power DC-DC SMPS converters
· Other high frequency applications
Description
Product Summary
V OFFSET 200V max.
I O +/- 1.0A /1.0A typ.
V OUT 10 - 20V
t on/off 80 & 60 ns typ.
Delay Matching 20 ns max.
Packages
The IR2011 is a high power, high speed power MOSFET driver with independent high
and low side referenced output channels, ideal for Audio Class D and DC-DC converter
applications. Logic inputs are compatible with standard CMOS or LSTTL output, down
to 3.0V logic. The output drivers feature a high pulse current buffer stage designed for
minimum driver cross-conduction. Propagation delays are matched to simplify use in
high frequency applications. The floating channel can be used to drive an N-channel
power MOSFET in the high side configuration which operates up to 200 volts. Propri-
etary HVIC and latch immune CMOS technologies enable ruggedized monolithic con-
struction.
Typical Connection
8-Lead SOIC
IR2011S
8-Lead PDIP
IR2011
200V
HIN
LIN
5 HIN
LIN
V S 4
HO
COM
8
COM
LO
V B
V CC 1
TO
LOAD
V CC
(Refer to Lead Assignments for correct configuration). This/These diagram(s) show electrical connections only. Please
refer to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IR2011SPBF | 功能描述:功率驱动器IC HI LO SIDE DRVR 200V 1.0A 80ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR2011STR | 功能描述:HI/LO SIDE DRVR 8SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| IR2011STRPBF | 功能描述:功率驱动器IC Hi&Lw Sd Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR2011STRRPBF | 制造商:International Rectifier 功能描述:MOSFET DRVR 200V 1A 2-OUT Hi/Lo Side Non-Inv 8-Pin SOIC T/R |
| IR20153S | 制造商:IRF 制造商全称:International Rectifier 功能描述:HIGH SIDE DRIVER WITH RECHARGE |
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