参数资料
型号: IR2128STR
厂商: International Rectifier
文件页数: 3/16页
文件大小: 0K
描述: IC MOSFET DRIVER CUR-SENSE 8SOIC
标准包装: 2,500
配置: 高端
输入类型: 反相
延迟时间: 200ns
电流 - 峰: 250mA
配置数: 1
输出数: 1
高端电压 - 最大(自引导启动): 600V
电源电压: 12 V ~ 20 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
IR2127(S) / IR21271(S) / IR2128(S) & (PbF)
Dynamic Electrical Characteristics
V BIAS (V CC , V BS ) = 15V, C L = 1000 pF and T A = 25 ° C unless otherwise specified. The dynamic electrical characteristics
are measured using the test circuit shown in Figure 3.
Symbol
Definition
Min.
Typ. Max. Units Test Conditions
t on
t off
t r
t f
t bl
t cs
t flt
Turn-On Propagation Delay
Turn-Off Propagation Delay
Turn-On Rise Time
Turn-Off Fall Time
Start-Up Blanking Time
CS Shutdown Propagation Delay
CS to FAULT Pull-Up Propagation Delay
500
200
150
80
40
700
240
340
250
200
130
65
900
360
510
ns
V S = 0V
V S = 600V
Static Electrical Characteristics
V BIAS (V CC , V BS ) = 15V and T A = 25 ° C unless otherwise specified. The V IN , V TH and I IN parameters are referenced to
COM. The V O and I O parameters are referenced to V S .
Symbol
Definition
Min.
Typ. Max. Units Test Conditions
V IH
V IL
V CSTH+
Logic “1” Input Voltage
Logic “0” Input Voltage
Logic “0” Input Voltage
Logic “1” Input Voltage
CS Input Positive
Going Threshold
(IR2127/IR21271)
(IR2128)
(IR2127/IR21271)
(IR2128)
(IR2127/IR2128)
(IR21271)
3.0
180
250
1.8
0.8
320
V
mV
V
V CC = 10V to 20V
V OH
V OL
I LK
I QBS
I QCC
I IN+
I IN-
I CS+
I CS-
V BSUV+
V BSUV-
I O+
High Level Output Voltage, V BIAS - V O
Low Level Output Voltage, V O
Offset Supply Leakage Current
Quiescent V BS Supply Current
Quiescent V CC Supply Current
Logic “1” Input Bias Current
Logic “0” Input Bias Current
“High” CS Bias Current
“High” CS Bias Current
V BS Supply Undervoltage
(IR2127/IR2128)
Positive Going Threshold
(IR21271)
(IR2127/IR2128)
V BS Supply Undervoltage
(IR21271)
Negative Going Threshold
Output High Short Circuit Pulsed Current
8.8
6.3
7.5
6.0
200
200
60
7.0
10.3
7.2
9.0
6.8
250
100
100
50
400
120
15
1.0
1.0
1.0
11.8
8.2
10.6
7.7
mV
μ A
V
I O = 0A
I O = 0A
V B = V S = 600V
V IN = 0V or 5V
V IN = 5V
V IN = 0V
V CS = 3V
V CS = 0V
V O = 0V, V IN = 5V
mA
PW ≤ 10 μ s
I O-
Output Low Short Circuit Pulsed Current
420
500
V O = 15V, V IN = 0V
PW ≤ 10 μ s
Ron, FLT
FAULT - Low on Resistance
125
?
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