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参数资料
| 型号： | IR2521DSTRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 2/17页 |
| 文件大小： | 0K |
| 描述： | IC BALLAST CTLR ADAPTIVE 8-SOIC |
| 标准包装： | 1 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 标准包装 |
| 其它名称： | IR2521DSTRPBFDKR |
IR2520D(S)& (PbF)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions.
Symbol
V B
V S
V HO
V LO
I VCO
I CC
dV S /dt
Definition
High side floating supply voltage
High side floating supply offset voltage
High side floating output voltage
Low side output voltage
Voltage controlled oscillator input current (Note 1)
Supply current (Note 2)
Allowable offset voltage slew rate
Min.
-0.3
V B - 25
V S - 0.3
-0.3
-5
-25
-50
Max.
625
V B + 0.3
V B + 0.3
V CC + 0.3
+5
25
50
Units
V
mA
mA
V/ns
P D
Rth JA
T J
T S
T L
Package power dissipation @ T A ≤ +25 ° C
PD=(T JMAX -T A )Rth JA
Thermal resistance, junction to ambient
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
8-Lead PDIP
8-Lead SOIC
8-Lead PDIP
8-Lead SOIC
—
—
—
—
-55
-55
—
1
0.625
125
200
150
150
300
W
° C/W
° C
Note 1: This IC contains a zener clamp structure between the chip VCO and COM, which has a nominal breakdown voltage
of 6V. Please note that this pin should not be driven by a DC, low impedance power source greater than 6V.
Note 2: This IC contains a zener clamp structure between the chip VCC and COM, which has a nominal breakdown voltage
of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source greater than the
VCLAMP specified in the Electrical Characteristics section.
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions.
Symbol
V BS
V S
V CC
I CC
R FMIN
V VCO
T J
Definition
High side floating supply voltage
Steady state high side floating supply offset voltage
Supply voltage
Supply current
Minimum frequency setting resistance
VCO pin voltage
Junction temperature
Min.
V CC - 0.7
-1
V CCUV+
Note 3
20
0
-25
Max.
V CLAMP
600
V CLAMP
10
140
5
125
Units
V
mA
k ?
V
°C
Note 3: Enough current should be supplied into the VCC pin to keep the internal 15.6V zener clamp diode on this pin
regulating its voltage, VCLAMP.
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IR25600PBF | 功能描述:功率驱动器IC Dual Low Side Driver 6V to 20V 1.5A 85ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR25600SPBF | 功能描述:功率驱动器IC Dual Low Side Driver 6V to 20V 1.5A 85ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR25600SPBF | 制造商:International Rectifier 功能描述:DRIVER, MOSFET/IGBT, LOW SIDE, SOIC-8 |
| IR25600STRPBF | 功能描述:功率驱动器IC Dual Low Side Driver 6V to 20V 1.5A 85ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR25601SPBF | 功能描述:功率驱动器IC 2Ch 600V Half Bridge 60mA 10-20V 50ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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