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参数资料
| 型号： | IR2521DSTRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 8/17页 |
| 文件大小： | 0K |
| 描述： | IC BALLAST CTLR ADAPTIVE 8-SOIC |
| 标准包装： | 1 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 标准包装 |
| 其它名称： | IR2521DSTRPBFDKR |
IR2520D(S)& (PbF)
VVCO
6V
4.8V
0.85V
Run Mode
The IR2520D enters RUN mode when the voltage on pin
VCO exceeds 4.8V (V VCO_RUN ). The lamp has ignited and
the ballast output stage becomes a low-Q, series-L, paral-
lel-RC circuit. Also, the VS sensing and fault logic blocks
(Figure 5) both become enabled for protection against non-
ZVS and over-current fault conditions. The voltage on the
VCO pin continues to increase and the frequency deceases
Freq
fmax
Frequency Sweep Mode
Run Mode
further until the VCO pin voltage limits at 6V (V VCO_MAX )
and the minimum frequency is reached. The resonant in-
ductor, resonant capacitor, DC bus voltage and minimum
frequency determine the running lamp power. The IC stays
at this minimum frequency unless non-ZVS occurs at the
VS pin, a crest factor over-current condition is detected at
the VS pin, or VCC decreases below the UVLO- threshold
(see State Diagram).
fmin
Fig. 3 IR2520D Frequency sweep mode timing
diagram.
DCBUS(+)
RSUPPLY
DCP2
MHS
CVCC
RFMIN
VCC
COM
FMIN
VCO
1
2
3
Bootstrap
FET
Driver
15.6V
CLAMP
VCO
High-
and
Low-
side
Driver
8
7
6
VB
HO
VS
LO
CBS
CSNUB
TO LOAD
4
5
Vout
Vin
High -Q
Ignition
DCBUS(-)
CVCO
Fault
Logic
VS
Sense
MLS
DCP1
LOAD RETURN
Fig. 5 IR2520D Run mode circuitry.
Low -Q
Run
Start
Non Zero-Voltage Switching (ZVS) Protection
During run mode, if the voltage at the VS pin has not slewed
entirely to COM during the dead-time such that there is
fmin
fmax
Frequency
voltage between the drain and source of the external low-
side half-bridge MOSFET when LO turns-on, then the system
Fig. 4 Resonant tank Bode plot with lamp operating
points.
8
is operating too close to, or, on the capacitive side of,
resonance. The result is non-ZVS capacitive-mode
switching that causes high peak currents to flow in the
half-bridge MOSFETs that can damage or destroy them
(Figure 6). This can occur due to a lamp filament failure(s),
www.irf.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IR25600PBF | 功能描述:功率驱动器IC Dual Low Side Driver 6V to 20V 1.5A 85ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR25600SPBF | 功能描述:功率驱动器IC Dual Low Side Driver 6V to 20V 1.5A 85ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR25600SPBF | 制造商:International Rectifier 功能描述:DRIVER, MOSFET/IGBT, LOW SIDE, SOIC-8 |
| IR25600STRPBF | 功能描述:功率驱动器IC Dual Low Side Driver 6V to 20V 1.5A 85ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR25601SPBF | 功能描述:功率驱动器IC 2Ch 600V Half Bridge 60mA 10-20V 50ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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