参数资料
型号: IR3009
厂商: International Rectifier
英文描述: 3 PHASE OPTERON, ATHLON, OR VR10.X CONTROL IC
中文描述: 3相皓龙,速龙,或控制IC的VR10.X
文件页数: 31/39页
文件大小: 693K
代理商: IR3009
IR3093
Page 31 of 39
07/15/04
MathCAD file to estimate the power dissipation of the IC
this Mathcad file step by step shows how to estimate the power dissipation of IR3093 .
Initial Conditions:
No.of Phases:
n
3
IC Supply Voltage:
Vcc
12
V
( )
, IC Supply Current(quiescent):
Icq
38
mA
(
)
Total High side Driver VCCH supply current(quiescent):
Iqh
5 n
mA
(
)
Total Low side Driver VCCL supply Current(quiescent):
Iql
5 n
mA
(
)
Biasout Voltage:
Vbias
7.5
V
( )
Switching Frequency per phase:
fsw
(oC/W)
300
kHz
(
)
Thermal Impedance of IC:
T
JA
27
The data from the selected MOSFETs:
ControI FET IR6623, Number of Control FET per phase:
nc
1
Control FET total gate charge:
Qgc
16
nC
(
)
Synchronous FET IR6620, Number of sync. FET per phase:
ns
1
Sync FET total gate charge:
Qgs
45
nC
(
)
Power Dissipation:
The IC will have less power dissipation if using external gate driver supply. For the worst case estimation,
assuming using the bias regulator for all the gate drive supply voltage.
1. Quiescent Power dissipation
Total Quiescent Power Dissipation:
Pq
Icq
Iqh
Iql
(
) Vcc
10
3
Pq
0.816
W
(
)
2. The Power Loss to drive the gate of the MOSFETs
With the assumption of the low MOSFET gate resistances, most gate drive losses are dissipated in
the driver circuit.
Pdrv
Vbias fsw
10
3
n
nc Qgc
ns Qgs
(
) 10
9
a
o
Where the
Ig
fsw 10
3
n
nc Qgc
ns Qgs
(
)
10
9
term in the equation gives the total
average bias current required to drive all the MOSFETs.
3. The bias regulator Power Loss to supply driving the MOSFETs
Preg
Vcc
Vbias
(
) Ig
Preg
0.247
W
(
)
4. Total Power Dissipation of the IC:
Pdiss
Pq
Pdrv
Preg
Pdiss
1.475
(oC)
W
(
)
And the total Junction temperature rising is:
Pdiss
T
JA
39.82
Pdrv
0.412
W
(
)
相关PDF资料
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