参数资料
型号: IR3510MTRPBF
厂商: International Rectifier
文件页数: 6/36页
文件大小: 0K
描述: IC XPHASE CONTROL 32-MLPQ
标准包装: 1
系列: XPhase™
应用: 处理器
安装类型: 表面贴装
封装/外壳: 32-VFQFN 裸露焊盘
供应商设备封装: 32-MLPQ(5x5)
包装: 标准包装
产品目录页面: 1383 (CN2011-ZH PDF)
其它名称: IR3510MTRPBFDKR
IR3510
Input Soft-Start Regulator
Gain
Transconductance
Bandwidth
Sink Current
V(SS) = 2V
Note 2
Note 2,
Cgate_i = 10n
2V ≤ V(GATE_I) ≤ V(CX)
4.0
7
4.5
200
4
15
5.1
23
V/V
μ A/V
KHz
μ A
Input OC Regulator
Input Offset Voltage
ICS+ Input Impedance
ICS- Bias Current
OC Regulator Transconductance
OC Regulator Bandwidth
0V ≤ V(ICS+), V(ICS)- ≤ V(VCC)
0V ≤ V(ICS)+ ≤ V(VCC)
0V ≤ V(ICS)- ≤ V(VCC)
Note 2,
I(GATE_I) = 0A
Note 2,
Cgate_i = 10n,
-10
25
-20
0
43
-22
140
350
10
86
-24
mV
Κ
μ A
μ A/mV
KHz
Rgate_i = 100
OC Time-out Threshold Voltage
0.7
0.8
0.9
V
OC Pull-down Current
Severe Over-Current Threshold
IOCD Charge Current
IOCD Charge Voltage
IOCD Discharge Time
3V ≤ V(GATE_I) ≤ V(CX)
Above V(ICS-)
V(IOCD) = 0, 2V
Float IOCD
0.8V ≤ V(IOCD) ≤ 3,
25
40
- 19.5
2.7
0.2
75
60
-21.5
3
3.5
115
95
- 23.5
3.3
5
mA
mV
μ A
V
us
C(IOCD) = 10n
IOCD Discharge Voltage
Float IOCD
0
50
100
mV
Input FET Gate Driver
Turn-on Current
Gate Fall Time
V(GATE_I) = V(VCC)
V(GATE_I) from 0.9 V(CX) to
- 19
40
- 25
110
- 31
250
μ A
ns
V(VCC)
V(VCC) = 12V, Cgate_i = 10n
GATE_I response to OC
Note 2
0.05
0.2
0.6
us
GATE_I response to Severe OC
Note 2,
50mv Over-Drive
0.025
0.1
0.25
us
Clamping Voltage
V(GATE_I) – V(ICS+)
9
13
16
V
VR Input UVLO2
Start Threshold Voltage
Stop Threshold Voltage
VR Input UVLO Hysteresis
8.7
7.9
0.6
8.9
8.1
0.8
9.3
8.5
1.0
V
V
V
(UVLO1) – (UVLO2)
Stop Threshold Voltage
-180
90
350
mV
Oscillator
Switching Frequency
Peak Voltage (5V typical,
255
68
300
70.5
345
73
KHz
%
measured as % of VBIAS)
Valley Voltage (1V typical,
11
14
16
%
measured as % of VBIAS)
VROSC
ROSC = 42K
1.220
1.232
1.244
V
Page 6 of 36
IR Confidential
May 18, 2009
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