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参数资料
| 型号： | IR3519STRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET GATE DRIVER SON-8 |
| 标准包装： | 2,500 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 延迟时间： | 15ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 35V |
| 电源电压： | 7V |
| 工作温度： | 0°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SON |
| 包装： | 带卷 (TR) |
IR3519
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings (Referenced to GND)
BOOT Voltage: ................................................ 40 V
PH Voltage: ..............-5V(100ns),-0.3V(DC) to 35 V
UGATE Voltage: ......-5V(100ns),-0.3V(DC) to 40 V
LGATE Voltage: .........-5V(100ns),-0.3V(DC) to 8 V
BOOT - PH Voltage: ............................ -0.3V to 8 V
UGATE - PH Voltage: .......................... -0.3V to 8 V
Operating Junction Temperature .. -10°C to +150 o C
MSL Rating .................................................. Level 2
Reflow Temperature …................................260 o C
Storage Temperature Range .......... -65 o C to 150 o C
ESD Rating ......... HBM Class 1C JEDEC Standard
6.5V ≤ VDD ≤ 7.5V, 0 C ≤ T J ≤ 125 C
VDD: .................................................................. 8 V
GND: .................................................. -0.3V to 0.3V
All other pins ........................................ -0.3V to 8 V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only and functional operation of the device at these or any other conditions beyond those
indicated in the operational sections of the specifications are not implied.
RECOMMENDED OPERATING CONDITIONS
o o
ELECTRICAL SPECIFICATIONS
The electrical characteristics involve the spread of values guaranteed within the recommended operating
conditions. Typical values represent the median values, which are related to 25°C. C UGATE = 3.3nF, C LGATE = 6.8nF
(unless otherwise specified).
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
Gate Drivers
UGATE Source Resistance
UGATE Sink Resistance
LGATE Source Resistance
LGATE Sink Resistance
UGATE Source Current
BOOT – PH = 7V. Note 1
BOOT – PH = 7V. Note 1
VDD –GND = 7V. Note 1
VDD – GND = 7V. Note 1
BOOT=7V, UGATE=3.5V,
1.0
1.0
1.0
0.4
2.0
2.5
2.5
2.5
1.0
?
?
?
?
A
SW=0V. Note 1
UGATE Sink Current
BOOT=7V, UGATE=3.5V,
2.0
A
SW=0V. Note 1
LGATE Source Current
VDD=7V, LGATE=3.5V,
2.0
A
GND=0V. Note 1
LGATE Sink Current
VDD=7V, LGATE=3.5V,
5.0
A
GND=0V. Note 1
UGATE Rise Time
BOOT – PH = 7V, measure 1V
5
ns
to 4V transition time.
UGATE Fall Time
BOOT - PH = 7V, measure 4V to
5
ns
1V transition time.
LGATE Rise Time
VDD – GND = 7V, Measure 1V
10
ns
to 4V transition time.
LGATE Fall Time
VDD – GND = 7V, Measure 4V
5
ns
to 1V transition time.
Page 2 of 10
www.irf.com
8/15/08
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