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| 型号： | IRF1405S |
| 厂商： | International Rectifier |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 131A D2PAK |
| 标准包装： | 50 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 131A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5.3 毫欧 @ 101A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 260nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 5480pF @ 25V |
| 功率 - 最大： | 200W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 管件 |
| 其它名称： | *IRF1405S |
PD -93992A
IRF1405S
AUTOMOTIVE MOSFET
Typical Applications
Electric Power Steering (EPS)
IRF1405L
HEXFET ? Power MOSFET
Anti-lock Braking System (ABS)
Wiper Control
Climate Control
D
V DSS = 55V
Power Door
Benefits
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
G
S
R DS(on) = 5.3m ?
I D = 131A ?
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Description
Stripe Planar design of HEXFET ? Power MOSFETs
utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These
benefits combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
Absolute Maximum Ratings
Parameter
D 2 Pak
IRF1405S
Max.
TO-262
IRF1405L
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 10V
131 ?
I D @ T C = 100°C
I DM
P D @T C = 25°C
V GS
E AS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current ?
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ?
Avalanche Current
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ?
93 ?
680
200
1.3
± 20
590
See Fig.12a, 12b, 15, 16
5.0
A
W
W/°C
V
mJ
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
-55 to + 175
300 (1.6mm from case )
10 lbf?in (1.1N?m)
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
R θ JA
Junction-to-Case
Junction-to-Ambient (PCB mount) ?
–––
–––
0.75
40
°C/W
www.irf.com
1
12/07/04
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF1405SHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 131A 3-Pin(2+Tab) D2PAK |
| IRF1405SPBF | 功能描述:MOSFET 55V 1 N-CH HEXFET 5.3mOhms 170nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF1405STRL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 131A I(D) | TO-263AB |
| IRF1405STRLHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 131A 3PIN D2PAK - Tape and Reel |
| IRF1405STRLPBF | 功能描述:MOSFET MOSFT 55V 131A 5.3mOhm 170nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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