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| 型号： | IRF2907ZS |
| 厂商： | International Rectifier |
| 英文描述： | AUTOMOTIVE MOSFET |
| 中文描述： | 汽车MOSFET的 |
| 文件页数： | 1/12页 |
| 文件大小： | 361K |
| 代理商： | IRF2907ZS |
IRF2907Z
IRF2907ZS
IRF2907ZL
www.irf.com
1
AUTOMOTIVE MOSFET
HEXFET
is a registered trademark of International Rectifier.
Description
Specifically designed for Automotive applications,
this HEXFET
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
PD - 95872
D
2
Pak
IRF2907ZS
TO-220AB
IRF2907Z
TO-262
IRF2907ZL
HEXFET
Power MOSFET
V
DSS
= 75V
R
DS(on)
= 4.5m
I
D
= 75A
S
D
G
Absolute Maximum Ratings
Parameter
Units
A
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
W
W/°C
V
mJ
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
A
mJ
°C
Parameter
Typ.
–––
0.50
–––
–––
Max.
0.45
–––
62
40
Units
°C/W
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
10 lbfin (1.1Nm)
330
2.2
± 20
300
690
See Fig.12a,12b,15,16
300 (1.6mm from case )
-55 to + 175
Max.
170
120
75
680
相关PDF资料 |
PDF描述 |
|---|---|
| IRF2907Z | AUTOMOTIVE MOSFET |
| IRF2907ZS-7PPBF | IRF2907ZS-7PPBF |
| IRF3205L | Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A) |
| IRF3205 | Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A) |
| IRF3205S | Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF2907ZS-7PPBF | 功能描述:MOSFET 75V 1 N-CH HEXFET 3.8mOhms 170nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF2907ZS-7PPBF_06 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET㈢ Power MOSFET |
| IRF2907ZSHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 75V 170A 3-Pin(2+Tab) D2PAK |
| IRF2907ZSPBF | 功能描述:MOSFET 75V 1 N-CH HEXFET 4.5mOhms 180nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF2907ZSTRL7PP | 功能描述:MOSFET 75V 1 N-CH HEXFET 3.8mOhms 170nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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