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参数资料
| 型号： | IRF2907ZS-7PPBF |
| 厂商： | International Rectifier |
| 英文描述： | IRF2907ZS-7PPBF |
| 中文描述： | IRF2907ZS - 7PPBF |
| 文件页数： | 1/10页 |
| 文件大小： | 664K |
| 代理商： | IRF2907ZS-7PPBF |
IRF2907ZS-7PPbF
HEXFET
Power MOSFET
V
DSS
= 75V
R
DS(on)
= 3.8m
I
D
= 160A
www.irf.com
1
HEXFET
is a registered trademark of International Rectifier.
S
D
G
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
PD - 97031
Absolute Maximum Ratings
Parameter
Units
A
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
W
W/°C
V
mJ
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
A
mJ
°C
Parameter
Typ.
–––
0.50
–––
–––
Max.
0.50
–––
62
40
Units
°C/W
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
Max.
180
120
160
700
300
10 lbfin (1.1Nm)
2.0
± 20
160
410
See Fig.12a,12b,15,16
300 (1.6mm from case )
-55 to + 175
Description
Specifically designed for high current, high reliabil-
ity applications, this HEXFET
Power MOSFET
utilizes the latest processing techniques and ad-
vanced packaging technology to achieve extremely
low on-resistance and world -class current ratings.
Additional features of this design are a 175°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Server &
Telecom OR'ing, Automotive and low voltage Motor
Drive Applications.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF2907ZS-7PPBF_06 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET㈢ Power MOSFET |
| IRF2907ZSHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 75V 170A 3-Pin(2+Tab) D2PAK |
| IRF2907ZSPBF | 功能描述:MOSFET 75V 1 N-CH HEXFET 4.5mOhms 180nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF2907ZSTRL7PP | 功能描述:MOSFET 75V 1 N-CH HEXFET 3.8mOhms 170nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF2907ZSTRLPBF | 功能描述:MOSFET MOSFT 75V 170A 4.5mOhm 180nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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