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参数资料
| 型号： | IRF2907ZS-7PPBF |
| 厂商： | International Rectifier |
| 英文描述： | IRF2907ZS-7PPBF |
| 中文描述： | IRF2907ZS - 7PPBF |
| 文件页数： | 2/10页 |
| 文件大小： | 664K |
| 代理商： | IRF2907ZS-7PPBF |
2
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C,
L=0.026mH, R
G
= 25
, I
AS
= 110A, V
GS
=10V.
Part not recommended for use above this value.
Pulse width
≤
1.0ms; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same
charging time as C
oss
while V
DS
is rising from 0 to 80%
V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D
2
Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
R
θ
is measured at T
J
of approximately 90°C.
S
D
G
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
Β
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
SMD
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Min.
75
–––
–––
2.0
94
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
0.066
–––
3.0
3.8
–––
4.0
–––
–––
–––
20
–––
250
–––
200
–––
-200
170
260
55
–––
66
–––
21
–––
90
–––
92
–––
44
–––
4.5
–––
V
V/°C
m
V
S
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
nC
ns
nH
Between lead,
6mm (0.25in.)
from package
L
S
Internal Source Inductance
–––
7.5
–––
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
7580
970
540
3750
650
1110
–––
–––
–––
–––
–––
–––
pF
Diode Characteristics
Parameter
I
S
Continuous Source Current
Min.
–––
Typ. Max. Units
–––
160
(Body Diode)
Pulsed Source Current
A
I
SM
–––
–––
700
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
SD
t
rr
Q
rr
–––
–––
–––
–––
35
40
1.3
53
60
V
ns
nC
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 110A
V
DS
= 75V, V
GS
= 0V
V
DS
= 75V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 110A
T
J
= 25°C, I
F
= 110A, V
DD
= 38V
di/dt = 100A/μs
T
J
= 25°C, I
S
= 110A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 60V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 60V
V
GS
= 10V
MOSFET symbol
Conditions
R
G
= 2.6
I
D
= 110A
V
DS
= 60V
V
GS
= 10V
V
DD
= 38V
I
D
= 110A
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相关代理商/技术参数 |
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|---|---|
| IRF2907ZS-7PPBF_06 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET㈢ Power MOSFET |
| IRF2907ZSHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 75V 170A 3-Pin(2+Tab) D2PAK |
| IRF2907ZSPBF | 功能描述:MOSFET 75V 1 N-CH HEXFET 4.5mOhms 180nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| IRF2907ZSTRLPBF | 功能描述:MOSFET MOSFT 75V 170A 4.5mOhm 180nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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