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参数资料
| 型号： | IRF3007LPBF |
| 元件分类： | JFETs |
| 英文描述： | 62 A, 75 V, 0.0126 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封装： | LEAD FREE, PLASTIC, TO-262, 3 PIN |
| 文件页数： | 10/11页 |
| 文件大小： | 323K |
| 代理商： | IRF3007LPBF |
IRF3007S/LPbF
8
www.irf.com
Fig 17.
Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET Power MOSFETs
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
-
RG
VDD
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
VDS
90%
10%
VGS
td(on)
tr
td(off) tf
VDS
Pulse Width ≤ 1 s
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-VDD
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF3007PBF | 功能描述:MOSFET 75V 1 N-CH HEXFET 12.6mOhms 89nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF3007S | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRF3007SPBF | 功能描述:MOSFET 75V 1 N-CH HEXFET 12.6mOhms 89nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF3007STRLPBF | 制造商:International Rectifier 功能描述:75V D2PAK - Tape and Reel 制造商:International Rectifier 功能描述:MOSFET N CH 75V 62A TO220AB 制造商:International Rectifier 功能描述:MOSFET 75V D2PAK |
| IRF3103 | 制造商:INTERFET 制造商全称:INTERFET 功能描述:HEXFET㈢ Power MOSFET |
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