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参数资料
| 型号： | IRF3007LPBF |
| 元件分类： | JFETs |
| 英文描述： | 62 A, 75 V, 0.0126 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封装： | LEAD FREE, PLASTIC, TO-262, 3 PIN |
| 文件页数： | 4/11页 |
| 文件大小： | 323K |
| 代理商： | IRF3007LPBF |
IRF3007S/LPbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
75
–––
V
VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
––– 0.084 –––
V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
10.5 12.6
m
VGS = 10V, ID = 48A
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = 10V, ID = 250A
gfs
Forward Transconductance
180
–––
S
VDS = 25V, ID = 48A
–––
20
A
VDS = 75V, VGS = 0V
–––
250
VDS = 60V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
200
VGS = 20V
Gate-to-Source Reverse Leakage
–––
––– -200
nA
VGS = -20V
Qg
Total Gate Charge
–––
89
130
ID = 48A
Qgs
Gate-to-Source Charge
–––
21
32
nC
VDS = 60V
Qgd
Gate-to-Drain ("Miller") Charge
–––
30
45
VGS = 10V
td(on)
Turn-On Delay Time
–––
12
–––
VDD = 38V
tr
Rise Time
–––
80
–––
ID = 48A
td(off)
Turn-Off Delay Time
–––
55
–––
RG = 4.6
tf
Fall Time
–––
49
–––
VGS = 10V
Between lead,
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
––– 3270 –––
VGS = 0V
Coss
Output Capacitance
–––
520
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
78
–––
= 1.0MHz, See Fig. 5
Coss
Output Capacitance
––– 3500 –––
VGS = 0V, VDS = 1.0V, = 1.0MHz
Coss
Output Capacitance
–––
340
–––
VGS = 0V, VDS = 60V, = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
640
–––
VGS = 0V, VDS = 0V to 60V
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
S
D
G
IGSS
ns
4.5
7.5
IDSS
Drain-to-Source Leakage Current
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
1.3
V
TJ = 25°C, IS = 48A, VGS = 0V
trr
Reverse Recovery Time
–––
85
130
ns
TJ = 25°C, IF = 48A, VDD = 38V
Qrr
Reverse Recovery Charge
–––
280 420
nC
di/dt = 100A/s
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
80
320
A
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting TJ = 25°C, L = 0.24mH
RG = 25
, IAS = 48A, VGS=10V (See Figure 12).
ISD ≤ 48A, di/dt ≤ 330A/s, VDD ≤ V(BR)DSS,
TJ
≤ 175°C
Pulse width ≤ 400s; duty cycle ≤ 2%.
Notes:
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
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