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| 型号： | IRF510 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 5.6A TO-220AB |
| 标准包装： | 1,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 540 毫欧 @ 3.4A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8.3nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 180pF @ 25V |
| 功率 - 最大： | 43W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | *IRF510 |
IRF510, SiHF510
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
R thJA
R thCS
R thJC
TYP.
-
0.50
-
MAX.
62
-
3.5
UNIT
°C/W
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
V DS
? V DS /T J
V GS(th)
I GSS
I DSS
V GS = 0 V, I D = 250 μA
Reference to 25 °C, I D = 1 mA
V DS = V GS , I D = 250 μA
V GS = ± 20 V
V DS = 100 V, V GS = 0 V
V DS = 80 V, V GS = 0 V, T J = 150 °C
100
-
2.0
-
-
-
-
0.12
-
-
-
-
-
-
4.0
± 100
25
250
V
V/°C
V
nA
μA
Drain-Source On-State Resistance
R DS(on)
V GS = 10 V
I D =3.4 A b
-
-
0.54
?
Forward Transconductance
g fs
V DS = 50 V, I D = 3.4 A b
1.3
-
-
S
Dynamic
Input Capacitance
C iss
V GS = 0 V,
-
180
-
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C oss
C rss
Q g
V DS = 25 V,
f = 1.0 MHz, see fig. 5
I D = 5.6 A, V DS = 80 V
-
-
-
81
15
-
-
-
8.3
pF
Gate-Source Charge
Gate-Drain Charge
Q gs
Q gd
V GS = 10 V
V DS = 10 V,
13 b
see fig. 6 and
-
-
-
-
2.3
3.8
nC
Turn-On Delay Time
t d(on)
-
6.9
-
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = 50 V, I D = 5.6 A
R g = 24 ? , R D = 8.4 ?? , see fig. 10 b
-
-
-
16
15
9.4
-
-
-
ns
Internal Drain Inductance
Internal Source Inductance
L D
L S
Between lead,
6 mm (0.25") from
package and center of
die contact
G
D
S
-
-
4.5
7.5
-
-
nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I S
MOSFET symbol
showing the
D
-
-
5.6
integral reverse
G
A
Pulsed Diode Forward Current a
I SM
p - n junction diode
S
-
-
20
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
V SD
t rr
Q rr
T J = 25 °C, I S = 5.6 A, V GS = 0 V b
T J = 25 °C, I F = 5.6 A, dI/dt = 100 A/μs b
-
-
-
-
100
0.44
2.5
200
0.88
V
ns
μC
Forward Turn-On Time
t on
Intrinsic turn-on time is negligible (turn-on is dominated by L S and L D )
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ? 300 μs; duty cycle ? 2 %.
www.vishay.com
2
Document Number: 91015
S11-0511-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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| IRF510A_Q | 功能描述:MOSFET 100V .2 Ohm 33W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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