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| 型号： | IRF5210L |
| 厂商： | International Rectifier |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 100V 40A TO-262 |
| 标准包装： | 50 |
| 系列： | HEXFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 40A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 60 毫欧 @ 24A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 180nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2700pF @ 25V |
| 功率 - 最大： | 3.8W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-262-3，长引线，I²Pak，TO-262AA |
| 供应商设备封装： | TO-262 |
| 包装： | 管件 |
| 其它名称： | *IRF5210L |
PD - 91405C
IRF5210S/L
HEXFET ? Power MOSFET
l
Advanced Process Technology
l
l
Surface Mount (IRF5210S)
Low-profile through-hole (IRF5210L)
D
V DSS = -100V
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
Description
G
S
R DS(on) = 0.06 ?
I D = -40A
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The D 2 Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
D P ak
anyexistingsurfacemountpackage.TheD 2 Pakissuitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRF5210L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
2
Max.
T O -26 2
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ -10V ?
-40
I D @ T C = 100°C
I DM
P D @T A = 25°C
P D @T C = 25°C
V GS
E AS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ -10V ?
Pulsed Drain Current ??
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ??
Avalanche Current ?
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ??
-29
-140
3.8
200
1.3
± 20
780
-21
20
-5.0
A
W
W
W/°C
V
mJ
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 175
300 (1.6mm from case )
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
R θ JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
–––
–––
0.75
40
°C/W
5/13/98
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF5210LHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 100V 40A 3-Pin(3+Tab) TO-262 |
| IRF5210LPBF | 功能描述:MOSFET MOSFT PCh -100V -0.4A 60mOhm 120nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF5210PBF | 功能描述:MOSFET MOSFT PCh -100V -40A 60mOhm 120nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF5210PBF | 制造商:International Rectifier 功能描述:MOSFET P -100V -40A TO-220 制造商:International Rectifier 功能描述:MOSFET P TO-220 TUBE 50 制造商:International Rectifier 功能描述:MOSFET, P, -100V, -40A, TO-220 制造商:International Rectifier 功能描述:MOSFET, P, -100V, -40A, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:100V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power ;RoHS Compliant: Yes |
| IRF5210PBF | 制造商:International Rectifier 功能描述:MOSFET |
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