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| 型号： | IRF540NL |
| 厂商： | International Rectifier |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 33A TO-262 |
| 标准包装： | 50 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 33A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 44 毫欧 @ 16A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 71nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1960pF @ 25V |
| 功率 - 最大： | 130W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-262-3，长引线，I²Pak，TO-262AA |
| 供应商设备封装： | TO-262 |
| 包装： | 管件 |
| 其它名称： | *IRF540NL |
PD - 91342B
IRF540NS
l
l
Advanced Process Technology
Ultra Low On-Resistance
IRF540NL
HEXFET ? Power MOSFET
l
l
l
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
D
V DSS = 100V
Description
Advanced HEXFET
Power MOSFETs from
l Fully Avalanche Rated
?
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D 2 Pak is a surface mount power package capable of
G
S
R DS(on) = 44m ?
I D = 33A
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D 2 Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF540NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
D 2 Pak
IRF540NS
Max.
TO-262
IRF540NL
Units
I D @ T C = 25°C
I D @ T C = 100°C
I DM
P D @T C = 25°C
V GS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ 10V ?
Continuous Drain Current, V GS @ 10V ?
Pulsed Drain Current ??
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current ?
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ??
33
23
110
130
0.87
± 20
16
13
7.0
A
W
W/°C
V
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
-55 to + 175
300 (1.6mm from case )
10 lbf?in (1.1N?m)
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
R θ JA
Junction-to-Case
Junction-to-Ambient (PCB mount)**
–––
–––
1.15
40
°C/W
www.irf.com
1
07/01/05
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF540NLHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 33A 3-Pin(3+Tab) TO-262 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 33A 3PIN TO-262 - Bulk |
| IRF540NLPBF | 功能描述:MOSFET MOSFT 100V 33A 44mOhm 47.3nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF540NPBF | 功能描述:MOSFET MOSFT 100V 33A 44mOhm 47.3nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF540NS | 制造商:International Rectifier 功能描述:MOSFET N D2-PAK |
| IRF540NS_05 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET㈢ Power MOSFET |
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