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| 型号： | IRF540STRR |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 28A D2PAK |
| 产品目录绘图： | IR(F,L,Z) Series Side 1 IR(F,L,Z) Series Side 2 |
| 标准包装： | 800 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 28A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 77 毫欧 @ 17A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 72nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1700pF @ 25V |
| 功率 - 最大： | 3.7W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
IRF540S, SiHF540S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
FEATURES
? Halogen-free According to IEC 61249-2-21
V DS (V)
100
Definition
R DS(on) ( ? )
Q g (Max.) (nC)
Q gs (nC)
Q gd (nC)
Configuration
V GS = 10 V
72
11
32
Single
0.077
? Surface Mount
? Available in Tape and Reel
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? 175 °C Operating Temperature
? Fast Switching
? Ease of Paralleling
D 2 PAK
(TO-263)
D
? Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design,
low on-resistance and
G
cost-effectiveness.
The D 2 PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
G D
S
S
N-Channel MOSFET
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D 2 PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
D 2 PAK (TO-263)
SiHF540S-GE3
IRF540SPbF
SiHF540S-E3
D 2 PAK (TO-263)
SiHF540STRL-GE3 a
IRF540STRLPbF a
SiHF540STL-E3 a
D 2 PAK (TO-263)
SiHF540STRR-GE3 a
IRF540STRRPbF a
SiHF540STR-E3 a
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
100
± 20
UNIT
V
Continuous Drain Current
V GS at 10 V
T C = 25 °C
T C = 100 °C
I D
28
20
A
Pulsed Drain Current a
I DM
110
Linear Derating Factor
Linear Derating Factor (PCB Mount) e
1.0
0.025
W/°C
Single Pulse Avalanche Energy b
Avalanche Current a
Repetitive Avalanche Energy a
E AS
I AR
E AR
230
28
15
mJ
A
mJ
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount) e
Peak Diode Recovery dV/dt c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
T C = 25 °C
T A = 25 °C
for 10 s
P D
dV/dt
T J , T stg
150
3.7
5.5
- 55 to + 175
300 d
W
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V DD = 25 V, starting T J = 25 °C, L = 440 μH, R g = 25 ? , I AS = 28 A (see fig. 12).
c. I SD ? 28 A, dI/dt ? 170 A/μs, V DD ? V DS , T J ? 175 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91022
S11-1046-Rev. D, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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