- 您现在的位置：买卖IC网 > PDF目录299220 > IRF6218PBF (VISHAY INTERTECHNOLOGY INC) 27 A, 150 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB PDF资料下载
参数资料
| 型号： | IRF6218PBF |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | JFETs |
| 英文描述： | 27 A, 150 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | LEAD FREE PACKAGE-3 |
| 文件页数： | 2/8页 |
| 文件大小： | 153K |
| 代理商： | IRF6218PBF |
IRF6218PbF
S
D
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
-150
–––
V
(BR)DSS/TJ
Breakdown Voltage Temp. Coefficient
–––
-0.17
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
120
150
m
VGS(th)
Gate Threshold Voltage
-3.0
–––
-5.0
V
IDSS
Drain-to-Source Leakage Current
–––
-25
A
–––
-250
IGSS
Gate-to-Source Forward Leakage
–––
-100
nA
Gate-to-Source Reverse Leakage
–––
100
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
gfs
Forward Transconductance
11
–––
S
Qg
Total Gate Charge
–––
71
110
Qgs
Gate-to-Source Charge
–––
21
–––
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
32
–––
td(on)
Turn-On Delay Time
–––
21
–––
tr
Rise Time
–––70–––
ns
td(off)
Turn-Off Delay Time
–––
35
–––
tf
Fall Time
–––30–––
Ciss
Input Capacitance
–––
2210
–––
Coss
Output Capacitance
–––
370
–––
Crss
Reverse Transfer Capacitance
–––
89
–––
pF
Coss
Output Capacitance
–––
2220
–––
Coss
Output Capacitance
–––
170
–––
Coss eff.
Effective Output Capacitance
–––
340
–––
Avalanche Characteristics
Parameter
Units
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
-27
(Body Diode)
A
ISM
Pulsed Source Current
–––
-110
(Body Diode)
VSD
Diode Forward Voltage
–––
-1.6
V
trr
Reverse Recovery Time
–––
150
–––
ns
Qrr
Reverse Recovery Charge
–––
860
–––
nC
Typ.
–––
Conditions
VDS = -50V, ID = -16A
ID = -16A
VDS = -120V
Conditions
VGS = -10V
f
VGS = 0V
VDS = -25V
= 1.0MHz
210
-16
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = -16A, VGS = 0V f
TJ = 25°C, IF = -16A, VDD = -25V
di/dt = -100A/s
f
Conditions
VGS = 0V, ID = -250A
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -16A
f
VDS = VGS, ID = -250A
VDS = -120V, VGS = 0V
VDS = -120V, VGS = 0V, TJ = 150°C
VGS = -20V
VGS = 20V
Max.
VGS = 0V, VDS = -1.0V, = 1.0MHz
VGS = 0V, VDS = -120V, = 1.0MHz
VGS = 0V, VDS = 0V to -120V
VGS = -10V
f
VDD = -75V
ID = -16A
RG = 3.9
Document Number: 91331
www.vishay.com
2
相关PDF资料 |
PDF描述 |
|---|---|
| IRF712R | 1.7 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| IRF720STRL | 3.3 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| IRF730ASTRRPBF | 5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| IRF7341IPBF | 4.7 A, 55 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| IRF743 | 8 A, 350 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF6218PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRF6218S | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRF6218SHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 150V 27A 3-Pin(2+Tab) D2PAK 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 150V 27A 3PIN D2PAK - Rail/Tube |
| IRF6218SPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF6218STRLHR | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 150V 27A 3PIN D2PAK - Tape and Reel |
发布紧急采购，3分钟左右您将得到回复。