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参数资料
| 型号： | IRF6218PBF |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | JFETs |
| 英文描述： | 27 A, 150 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | LEAD FREE PACKAGE-3 |
| 文件页数： | 4/8页 |
| 文件大小： | 153K |
| 代理商： | IRF6218PBF |
IRF6218PbF
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
1
10
100
-VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C
,
C
a
p
a
c
it
a
n
c
e
(p
F
)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
-VSD, Source-to-Drain Voltage (V)
0.10
1.00
10.00
100.00
1000.00
-I
S
D
,
R
e
v
e
rs
e
D
ra
in
C
u
rr
e
n
t
(A
)
TJ = 25°C
TJ = 175°C
VGS = 0V
1
10
100
1000
-VDS, Drain-to-Source Voltage (V)
1
10
100
1000
-I
D
,
D
ra
in
-t
o
-S
o
u
rc
e
C
u
rr
e
n
t
(A
)
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100sec
Tc = 25°C
Tj = 175°C
Single Pulse
0
10
20304050
607080
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
-V
G
S
,
G
a
te
-t
o
-S
o
u
rc
e
V
o
lt
a
g
e
(V
)
VDS= 120V
VDS= 75V
VDS= 30V
ID= -16A
Document Number: 91331
www.vishay.com
4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF6218PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRF6218S | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRF6218SHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 150V 27A 3-Pin(2+Tab) D2PAK 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 150V 27A 3PIN D2PAK - Rail/Tube |
| IRF6218SPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF6218STRLHR | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 150V 27A 3PIN D2PAK - Tape and Reel |
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