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参数资料
| 型号： | IRF730ASTRRPBF |
| 元件分类： | JFETs |
| 英文描述： | 5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, PLASTIC, D2PAK-3 |
| 文件页数： | 1/10页 |
| 文件大小： | 296K |
| 代理商： | IRF730ASTRRPBF |
3/16/04
www.irf.com
1
IRF730AS/LPbF
SMPS MOSFET
HEXFET Power MOSFET
l Switch Mode Power Supply (SMPS)
l Uninterruptable Power Supply
l High speed power switching
l Lead-Free
Benefits
Applications
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
VDSS
Rds(on) max
ID
400V
1.0
5.5A
Typical SMPS Topologies:
l Single Transistor Flyback Xfmr. Reset
l Single Transistor Forward Xfmr. Reset
(Both US Line input only).
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
5.5
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
3.5
A
IDM
Pulsed Drain Current
22
PD @TC = 25°C
Power Dissipation
74
W
Linear Derating Factor
0.6
W/°C
VGS
Gate-to-Source Voltage
± 30
V
dv/dt
Peak Diode Recovery dv/dt
4.6
V/ns
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Absolute Maximum Ratings
l Effective Coss Specified (See AN1001)
PD-95114
Notes through are on page 10
2
D Pak
TO-262
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF730B | 功能描述:MOSFET 400V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF730BPBF | 功能描述:MOSFET 400V 1ohm@10V 5.5A N/Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF730CHIP | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 5.5A I(D) | CHIP |
| IRF730FI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.5A I(D) | TO-220VAR |
| IRF730L | 功能描述:MOSFET N-CH 400V 5.5A TO-262 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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