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参数资料
| 型号： | IRF730ASTRRPBF |
| 元件分类： | JFETs |
| 英文描述： | 5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, PLASTIC, D2PAK-3 |
| 文件页数： | 3/10页 |
| 文件大小： | 296K |
| 代理商： | IRF730ASTRRPBF |
IRF730AS/LPbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
3.1
––– –––
S
VDS = 50V, ID = 3.3A
Qg
Total Gate Charge
–––
22
ID = 3.5A
Qgs
Gate-to-Source Charge
–––
5.8
nC
VDS = 320V
Qgd
Gate-to-Drain ("Miller") Charge
–––
9.3
VGS = 10V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
–––
10
–––
VDD = 200V
tr
Rise Time
–––
22
–––
ID = 3.5A
td(off)
Turn-Off Delay Time
–––
20
–––
RG = 12
tf
Fall Time
–––
16
–––
RD = 57,See Fig. 10
Ciss
Input Capacitance
–––
600 –––
VGS = 0V
Coss
Output Capacitance
–––
103 –––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
4.0
–––
pF
= 1.0MHz, See Fig. 5
Coss
Output Capacitance
–––
890 –––
VGS = 0V, VDS = 1.0V, = 1.0MHz
Coss
Output Capacitance
–––
30
–––
VGS = 0V, VDS = 320V, = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
45
–––
VGS = 0V, VDS = 0V to 320V
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
400
––– –––
V
VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.5
–––
V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
1.0
VGS = 10V, ID = 3.3A
VGS(th)
Gate Threshold Voltage
2.0
–––
4.5
V
VDS = VGS, ID = 250A
–––
25
A
VDS = 400V, VGS = 0V
–––
––– 250
VDS = 320V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
––– 100
VGS = 30V
Gate-to-Source Reverse Leakage
–––
––– -100
nA
VGS = -30V
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
–––
290
mJ
IAR
Avalanche Current
–––
5.5
A
EAR
Repetitive Avalanche Energy
–––
7.4
mJ
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
––– –––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
––– –––
p-n junction diode.
VSD
Diode Forward Voltage
––– –––
1.6
V
TJ = 25°C, IS = 5.5A, VGS = 0V
trr
Reverse Recovery Time
––– 370
550
ns
TJ = 25°C, IF = 3.5A
Qrr
Reverse RecoveryCharge
–––
1.6
2.4
C
di/dt = 100A/s
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Diode Characteristics
5.5
22
A
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.7
°C/W
RθJA
Junction-to-Ambient ( PCB Mounted, steady-state)*
–––
40
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