- 您现在的位置：买卖IC网 > PDF目录381955 > IRF630 (意法半导体) N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET(N沟道功率MOSFET) PDF资料下载
参数资料
| 型号： | IRF630 |
| 厂商： | 意法半导体 |
| 英文描述： | N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET(N沟道功率MOSFET) |
| 中文描述： | N沟道200伏-0.35Ω- 9A条- TO-220/FP网眼OVERLAYTM MOSFET的（不适用沟道功率MOSFET的） |
| 文件页数： | 2/9页 |
| 文件大小： | 104K |
| 代理商： | IRF630 |
THERMAL DATA
TO-220
TO-220FP
R
thj-case
Thermal Resistance Junction-case
Max
1.67
4.17
o
C/W
o
C/W
o
C/W
o
C
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Typ
62.5
0.5
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
9
A
E
AS
100
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwisespecified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
I
D
= 250
μ
A
V
GS
= 0
200
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating
V
GS
=
±
20 V
T
c
= 125
o
C
1
50
μ
A
μ
A
nA
I
GSS
±
100
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage V
DS
= V
GS
Static Drain-source On
Resistance
On State Drain Current
I
D
= 250
μ
A
I
D
= 5 A
2
3
4
V
V
GS
= 10V
0.35
0.40
I
D(on)
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
10
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 5 A
3
4
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
540
90
35
700
120
50
pF
pF
pF
IRF630/FP
2/9
相关PDF资料 |
PDF描述 |
|---|---|
| IRF640FP | N-Channel 200V-0.150Ω-18A - TO-220/FP MESH OVERLAYTM MOSFET(N沟道功率MOSFET) |
| IRF640 | N-Channel 200V-0.150Ω-18A - TO-220/FP MESH OVERLAYTM MOSFET(N沟道功率MOSFET) |
| IRF640S | N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET |
| IRF640S | Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A) |
| IRF730 | N-Channel 400V-0.75Ω-5.5A - TO-220 PowerMESHTM MOSFET(N沟道功率MOSFET) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF630 | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220 |
| IRF630 | 制造商:STMicroelectronics 功能描述:MOSFET N 200V 9A TO-220 制造商:STMicroelectronics 功能描述:MOSFET, N, 200V, 9A, TO-220 制造商:STMicroelectronics 功能描述:MOSFET, N, 200V, 9A, TO-220, Transistor Polarity:N Channel, Continuous Drain Current Id:9A, Drain Source Voltage Vds:200V, On Resistance Rds(on):400mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Dissipation , RoHS Compliant: Yes |
| IRF630_06 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-channel 200V - 0.35ヘ - 9A TO-220/TO-220FP Mesh overlay⑩ II Power MOSFET |
| IRF630_R4941 | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF630A | 制造商:Fairchild Semiconductor Corporation 功能描述: |
发布紧急采购，3分钟左右您将得到回复。