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参数资料
| 型号： | IRF630MFP |
| 厂商： | 意法半导体 |
| 英文描述： | N-CHANNEL 200V - 0.35W - 9A TO-220/TO-220FP MESH OVERLAY MOSFET |
| 中文描述： | N沟道200伏- 0.35W - 9A条TO-220/TO-220FP MOSFET的网格密胺 |
| 文件页数： | 1/9页 |
| 文件大小： | 343K |
| 代理商： | IRF630MFP |
1/9
October 2001
IRF630M
IRF630MFP
N-CHANNEL 200V - 0.35
- 9A TO-220/TO-220FP
MESH OVERLAY MOSFET
I
TYPICAL R
DS
(on) = 0.35
I
EXTREMELY HIGH dv/dt CAPABILITY
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the compa-
ny’s consolidated strip layout-based MESH OVER-
LAY process. This technology matches and
improves the performances compared with standard
parts from various sources.
Isolated TO-220 option simplifies assembly and cuts
risk of accidental short circuit in crowded monitor
PCB’s.
.APPLICATIONS
I
MONITOR DISPLAYS
I
GENERAL PURPOSE SWITCH
ABSOLUTE MAXIMUM RATINGS
Symbol
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
IRF630M
200 V
< 0.40
9 A
IRF630FPM
200 V
< 0.40
9 A
Parameter
Value
Unit
IRF630M
IRF630MFP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
G
)
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
200
V
200
V
Gate- source Voltage
± 20
V
Drain Current (continuos) at T
C
= 25°C
Drain Current (continuos) at T
C
= 100°C
9
9 (**)
A
5.7
5.7 (**)
A
Drain Current (pulsed)
36
36
A
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
75
30
W
0.6
5
0.24
5
W/°C
V/ns
dv/dt (1)
V
ISO
T
stg
T
j
Insulation Winthstand Voltage (DC)
--
2500
V
Storage Temperature
–65 to 150
°C
Max. Operating Junction Temperature
150
°C
(1)I
SD
≤
9A, di/dt
≤
300A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(**) Limited only by Maximum Temperature Allowed
INTERNAL SCHEMATIC DIAGRAM
1
2
3
TO-220
1
2
3
TO-220FP
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相关代理商/技术参数 |
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|---|---|
| IRF630N | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 9.3A 3-Pin(3+Tab) TO-220AB 制造商:International Rectifier 功能描述:MOSFET N TO-220 |
| IRF630N_04 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRF630N_R4942 | 功能描述:MOSFET TO-247 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF630NL | 功能描述:MOSFET N-CH 200V 9.3A TO-262 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRF630NLPBF | 功能描述:MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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