- 您现在的位置：买卖IC网 > PDF目录381955 > IRF630ST4 (意法半导体) TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-263AB PDF资料下载
参数资料
| 型号： | IRF630ST4 |
| 厂商： | 意法半导体 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-263AB |
| 中文描述： | 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 9A条（丁）|对263AB |
| 文件页数： | 1/8页 |
| 文件大小： | 85K |
| 代理商： | IRF630ST4 |
IRF630S
N - CHANNEL 200V - 0.35
- 9A - D
2
PAK
MESH OVERLAY
MOSFET
I
TYPICAL R
DS(on)
= 0.35
I
EXTREMELYHIGH dv/dt CAPABILITY
I
100%AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
I
FOR THROUGH-HOLE VERSION CONTACT
SALESOFFICE
DESCRIPTION
This power MOSFET is designed using the
company’s consolidatedstrip layout-based MESH
OVERLAY
process. This technology matches
and improves the performances compared with
standardparts from various sources.
APPLICATIONS
I
HIGH CURRENT SWITCHING
I
UNINTERRUPTIBLE POWER SUPPLY (UPS)
I
DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTINGEQUIPMENT.
INTERNAL SCHEMATIC DIAGRAM
December 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Parameter
Value
200
200
±
20
9
5.7
36
70
0.56
5
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/
o
C
V/ns
o
C
o
C
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
dv/dt(
1
)
T
stg
T
j
(
1
) I
SD
≤
9A, di/dt
≤
300 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 0.40
I
D
IRF630S
200 V
9 A
1
3
D
2
PAK
TO-263
(suffix ”T4”)
1/8
相关PDF资料 |
PDF描述 |
|---|---|
| IRF630 | N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET(N沟道功率MOSFET) |
| IRF640FP | N-Channel 200V-0.150Ω-18A - TO-220/FP MESH OVERLAYTM MOSFET(N沟道功率MOSFET) |
| IRF640 | N-Channel 200V-0.150Ω-18A - TO-220/FP MESH OVERLAYTM MOSFET(N沟道功率MOSFET) |
| IRF640S | N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET |
| IRF640S | Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF630STRL | 功能描述:MOSFET N-Chan 200V 9.0 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF630STRLPBF | 功能描述:MOSFET N-Chan 200V 9.0 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF630STRR | 功能描述:MOSFET N-CH 200V 9A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRF630STRRPBF | 功能描述:MOSFET N-Chan 200V 9.0 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF631 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
发布紧急采购，3分钟左右您将得到回复。